PURPOSE:To enable oscillation having a short wavelength and a low threshold by forming carrier introducing layers in specific thickness or less and carrier confinement layers in succession while being brought into contact with one of quantum wells and bringing the forbidden band width of each layer ...
【预订】Quantum-Well Laser Array Packaging 美国库房发货,通常付款后3-5周到货! 作者:Tomm, Jens W.出版社:McGraw-Hill ProfessionalPublishing出版时间:1988年08月 手机专享价 ¥ 当当价 降价通知 ¥1696 配送至 北京 至 北京市东城区 服务 由“中国进口图书旗舰店”发货,并提供售后服务。
Foreword: The Origin of Quantum Wells and the Quantum Well Laser. Optical Gain in III-V Bulk and Quantum Well Semiconductors. Intraband Relaxation Effect on Optical Spectra. Multiquantum Well Lasers: Threshold Considerations. Ultra-Low Threshold Quantum Well Lasers. Dynamics of Quantum Well Lasers. ...
Using a quantum-dash-in-well structure as the active medium, Xue et al. demonstrated a FP laser with a threshold current density of 1.3 kA/cm2 at RT, which emitted at up to 59 °C under CW operation21. Taking advantage of the use of nanopatterned V-grooved Si(100) substrates ...
Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes Packaging-induced strain is studied in high-power semiconductor lasers by a noninvasive optical technique. Fourier-transform photocurrent measurements with... JW Tomm,J Donecker - 《Journal of Applied Physics》 被引量:...
量子阱可调谐短腔激光器 Quantum well short cavity tunable lasersA tunable source includes a short cavity laser with quantum well gain region supporting wide tuning range. The short cavity laser with a quantum well gain region, large free spectral range cavity, fast tuning response and single ...
5. In a wavelength tuned quantum well laser having a primary emission wavelength capable of being changed to a desired emission wavelength shorter than said primary emission wavelength, and means to tune said laser to said desired shorter emission wavelength by incremental thermal annealing of said ...
Vertical cavity single quantum well laser We have achieved room‐temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containi... JL Jewell,KF Huang,K Tai,... - 《Applied Physics Letters》 被引量: 161发表: 1989年 1200 ...
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State densities g(epsilon) to energy epsilon of a single quantum well are changed stepwise respectively for electrons (a), light holes (b), and heavy holes (c). Because this element is formed with large internal loss alphai, the total loss alphatotal becomes large. Therefore, laser ...