Partin, Heremans, Thrush, " Side Optical Cavity, Single Quantum Well Diode Laser ", Superlattices and Microstructures, vol. 2, No. 5, 1986.Partin, Heremans, Thrush, "Side Optical Cavity, Single Quantum Well Diode Laser", Superlattices and Microstructures, vol. 2, No. 5, 1986....
A Segmented Electrode Multi-Quantum-Well Laser Diode An optical waveguide which has a multi-quantum-well (MQW) structure as an active or core region of the conventional double-hetero (DH) waveguide is attract... I Hidetoshi,T Seigo,S Tadashi,... - 《Japanese Journal of Applied Physics.pt ...
1) semiconductor quantum well laser diode 量子阱半导体激光管 例句>> 2) MQW-LD 多量子阱半导体激光器 例句>> 3) Semiconductor QW Laser 半导体量子阱激光器 4) 980nm quantum well laser diode 980nm量子阱半导体激光器 5) quantum-well semiconductor laser ...
AlGaAs/GaAs superlattice multi-quantum-well laser diode Short period (AlGaAs) m (GaAs) n (subscripts should stand for the monolayer number) superlattices have been applied to the active layer in a GRIN-SCH multi... H Imamoto,F Sato,K Imanaka,... - 《Superlattices & Microstructures》 被引量...
A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode. Nat. Photon., Vol. 2, No. 9, (September 2008), pp. 551-554, ISSN 1749-4885Yoshida, H.; Yamashita, Y.; Kuwabara, M.; Kan, H. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode. Nat Photonics 2008, 2, 551-...
A multi-quantum well (MQW) structure type semiconductor integrated laser element is constituted by a laser diode section and an optical modulator section which is integrated with the laser diode section and which contains a multi-quantum well structure. The multi- quantum well structure of the ...
Converts current into light that is injected, the active layer with a multiple quantum well structure, the PN junction structure of a compound semiconductor formed by sandwiching the active layer, the present invention includes an electrode for current injection In the quantum well laser diode inclu...
Shanghai Institute of Microsystem and Information Technology has developed a long-wavelength indium arsenide (InAs) quantum well (QW) laser diode (LD) grown on indium phosphide (InP) substrate [Y. Gu et al, Appl. Phys. Lett., vol106, p121102, 2015]. The researchers claim the longest ...
Single quantum well diode lasers in a lead‐chalcogenide materials system have now been fabricated for the first time. These devices were composed of PbTe quantum wells with Pb1-xEuxSeyTe1-y confinement layers. The quantum wells ranged in thickness from 300 to 2500 Å. Strong quantum effects...
Multi-Quantum Well (MQW) Laser Diode Specification Model: ELD83NPT5 30.10.2017 ELD83NPT50 1 of 9 Catalog 1.Scope ……….. 3 2. Outline Dimensions and Terminal Connections ………...….……… 3 3. Ratings and Characteristics ……….……….. 4 4. Reliability ………...……….. 5 ...