However, it was demonstrated that at maximum nominal power without sample heating/calcination single pulsed-DC magnetron sputtering tends to form smooth amorphous TiO2 films. On the other hand, due to the higher energetics of physical vapour condensation under similar conditions single RF magnetron ...
For reactive processes, use a Pulsed Direct Current (DC) Sputtering Deposition Source. Utilize this to prevent and eliminate charge buildup.
Chemical analysis using XPS showed that pulsed-DC sputtering had a higher deposition rate, oxygen binding rate, oxygen vacancy ratio, bandgap and good uniformity than RF sputtering. Subsequently, the density of the thin film was analyzed using XRR. When applied to TFT devices, the threshold ...
Bipolar pulsed DC sputtering is a new technique for high rate reactive deposition of dielectric oxides on diverse types of substrates. This effort reports on the application of Bipolar pulsed DC sputtering to gen...
In this study, aluminum nitride (AlN) thin films were deposited on Si (100) and investigated on the minimum film residual stress with varying two critical deposition conditions in N2gas flow and power. The pulsed DC reactive sputtering of aluminum targets was carried out in gas ratio of nitrog...
Pulsed-DC power supplyThin film synthesisA pulsed-dc power supply has been designed and constructed for use in a magnetron sputtering system and forthin film synthesis. The power supply consists of three major parts: (1) two high voltage direct current (dc) power suppliesutilizing a phase ...
andpulsed dc magnetron sputtering with or without inductively coupled radio-frequency (rf) plasma using a Titarget have been investigated for various discharge pressures ranging from 0.3 to 2.0 Pa. By cross-sectionalscanning electron microscopy, it is found that films deposited by pulsed dc sputtering...
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Building on AE®’s premier bipolar pulsed-DC technology, Ascent® AP power supplies extend your ability to optimize output with advanced pulse shaping, as well as four-block progressive arc management that includes full voltage reversal and self-adj
TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the direction, but the films deposited for 2 and 3 h were am