2168FUNDAMENTALSOFPOWERSEMICONDUCTORDEVICESThetradeoffbetweenreducingpowerdissipationintheon-stateandtheoff-stateforSchottkyrectifiersisalsoanalyzedinthischapter.Thistradeoffrequirestakingintoaccountthemaximumoperatingtemperaturefortheapplication.ThepowerdissipationintheSchottkyrectifierisshownto depend upon the barrier height ...
内容提示: B. Jayant BaligaFundamentals of Power Semiconductor Devices Second Edition 文档格式:PDF | 页数:1114 | 浏览次数:224 | 上传日期:2018-10-05 07:40:02 | 文档星级: B. Jayant BaligaFundamentals of Power Semiconductor Devices Second Edition ...
Power Semiconductor Devices
POWER SEMICONDUCTOR DEVICE 专利名称:POWER SEMICONDUCTOR DEVICE 发明人:TSUYUNO Nobutake,露野円丈,IDE Eiichi,井出英一,HIRAO Takashi,平尾高志,NAMBA Akihiro,難波明博,ISHII Toshiaki,石井利昭,HOZOJI Hiroshi,宝藏寺裕之,MATSUSHITA Akira,松下晃申请号:JP2019/004343 申请日:20190207 公开号:WO2019/181261...
semiconductor功率半导体可靠性power手册reliability ©2010AlphaandOmegaSemiconductor.aosmd Rev.1.0•5/20/10 PowerSemiconductor ReliabilityHandbook AlphaandOmegaSemiconductor 475OakmeadPkwy Sunnyvale,CA94085 U.S.A. PowerSemiconductorReliabilityHandbook ©2010AlphaandOmegaSemiconductor.aosmd Rev.1.0•5/20/102...
功率半导体器件基础 : Fundamentals of power semiconductor devices Download PDF Ebook and Read OnlineFundamentals Of Power Semiconductor Devices%0D. Get Fundamentals Of Power Semiconductor Devices%0D By reading fundamental... 巴利加韩郑生,陆江,宋李梅 - 功率半导体器件基础 : Fundamentals of power semicondu...
devices Classifications Major topics The concept of power electronic devices Power electronic devices: In broad sense Very often: Major material used in power semiconductor devices —— Silicon Features of power electronic devices The electric power that power electronic device deals with is usually much...
Power considerations when using CMOS and BiCMOS logic devices Fundamentals.of.WiMAX.Feb.2007 Universal Serial Bus Usage Tables for HID Power Devices fundamentals .of.microelectronics_Razavi.pdf Image_Processing--Fundamentals.pdf FAIRCHILD SEMICONDUCTOR POWER SEMINAR 2008 - 2009 ...
A brief survey of power semiconductor devices 4.2.1. Power diodes 4.2.2. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) 4.2.3. Bipolar Junction Transistor (BJT) 4.2.4. Insulated Gate Bipolar Transistor (IGBT) 4.2.5. Thyristors (SCR, GTO, MCT) 4.3. Switching loss 4.3.1. ...
Baliga, Fundamentals of Power Semiconductor Devices, doi: 10.1007/978-0-387-47314-7_3, ? Springer Science + Business Media, LLC 2008 92 FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES field exceeds 1 × 105 V cm?1 as discussed in Chap. 2. With further increase in the electric field, the ...