Semiconductor Power Devices Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann& Rik De Doncker 6242Accesses Abstract In a competitive market, technical systems rely on automation and process control to improve their productivity. Initially, these productivity gains were focused on attaining higher productio...
当当网图书频道在线销售正版《【预订】Semiconductor Power Devices: Physics, Characteristics, Reliability》,作者:Lutz,出版社:Springer。最新《【预订】Semiconductor Power Devices: Physics, Characteristics, Reliability》简介、书评、试读、价格、图片等相关信
The performance of ultrafast semiconductor disk lasers has rapidly advanced in recent decades. The strong interest from industry for inexpensive, compact, and reliable ultrafast laser sources in the picosecond and femtosecond domains has driven this tech
direct current-direct current converter, for use in electronic module, has power semiconductor chips applied on respective carriers that are arranged such that extensions point in different directionsSemiconductor component i.e. direct current-direct current converter, for use in electronic module, has ...
No. 09/935,454: “Method and Apparatus for Local and Global Power Management in a Programmable Analog Circuit;” Mar; 51 pages. U.S. Appl. No. 10/011,214: “Method and Circuit for Synchronizing a Write Operation between an On-Chip Microprocessor and an On-Chip Programmable Analog ...
A V-shaped trench structure (13) is made by basic etching. This constitutes the basis of the diffusion process for producing the edge zone (11) of the second conductor type. An Independent claim is included for the corresponding method of manufacture.Lutz HaaseWerner SichelstielDE...
Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, High Voltage, Axial Lead, Types 1N6528 through 1N6535, JAN, JANTX, JANTXV, and JANSdoi:MIL MIL-PRF-19500/577D本规范涵盖了硅,高压,快速恢复功率整流二极管的性能要求.按照MIL-PRF-19500的规定,每个设备都有四个级别的产品保证....
These power devices are non-ideal transistors because of their parasitic elements of bone wires and/or the electric terminals, as well as the intrinsic nature of the device itself, which experiences Mosfet inductances (source inductance 𝐿𝑠, drain inductance 𝐿𝑑, and gate inductance 𝐿...
Hence, under such conditions, the extent of dependence of both sides and the extent of power balance of both sides can easily cause the changes of the structure of the cooperation network and therefore influence the stability of the network. From a sociology perspective, the influence of the ...
Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth schemeA3. Molecular beam epitaxyB1. AntimonidesB1. ArsenidesB2. Semiconducting III-V materialsB3. Infrared devicesB3. Solid state lasers...