P-Channel Power MOSFET是什么意思 相关知识点: 试题来源: 解析 P沟道功率金属氧化物(半导体)场效应晶体管Power MOSFET功率金属氧化物(半导体)场效应晶体管 power MOSFET 能够控制超过1 A电流而不发生损伤和毁坏的金属氧化物场效应晶体管,有些可以控制高达100 A的电流,另一些可以控制高达1200 v的电压,它应用于高频...
P沟道功率金属氧化物(半导体)场效应晶体管Power MOSFET功率金属氧化物(半导体)场效应晶体管 power MOSFET 能够控制超过1 A电流而不发生损伤和毁坏的金属氧化物场效应晶体管,有些可以控制高达100 A的电流,另一些可以控制高达1200 v的电压,它应用于高频开关稳压电源和马达控制. 解析看不懂?免费查看同类题视频解析查看解...
P-channel power MOSFETs reducing design complexity in medium and low power applications A P-channel MOSFET uses hole flow as the charge carrier, which has less mobility than the electron flow used in N-channel MOSFETs. In functional terms, the main difference is that P-channel MOSFETs require ...
Infineon's N-channel and P-channel power MOSFETs are designed in a unique way to bring more efficiency, power density and cost-effectiveness. Power MOSFET subcategories Expand all subcategories Automotive MOSFET N-Channel Power MOSFET P-Channel Power MOSFET Small Signal/Small Power MOSFET N...
trench following a design technique, an absolute value of a threshold voltage of the p-channel power MOSFET is gradually increased accompanied by the lapse of a stress application time when continuously applying a negative bias to a gate with respect to a main board in a high-temperature state...
Enhancement Mode N-Channel Power MOSFET Fetures Applications The GreenMOS® high voltage MOSFET Oriental-OSG60R150PF US$0.24-1.00 1 Piece (MOQ) -60V -45A Nce60p45K Nce P-Channel Enhancement Mode Power Mosfet Transistor US$0.116-0.20 2,500 Pieces (MOQ) 5A 200V N-Ch...
MOSFET – Power, P-Channel Single ECH8 -30 V, -9 A, 17 mW ECH8310 Features • 4 V Drive • Halogen free compliance • Protection diode in • This Device is Pb−Free, Halogen Free and RoHS Compliant Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Symbol Parameter Conditions...
Ordering number : ENA1604A ATP108 P-Channel Power MOSFET –40V, –70A, 10.4mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • Slim package • Halogen free compliance • Large current • 4.5V drive • Protection diode in Specifications Absolute Maximum Ratings at...
晶体管类型 1 P-Channel 宽度 6.22 mm 商标 ON Semiconductor / Fairchild 正向跨导 - 最小值 16 S 下降时间 7 ns 产品类型 MOSFET 上升时间 15 ns 工厂包装数量 2500 子类别 MOSFETs 典型关闭延迟时间 22 ns 典型接通延迟时间 6 ns 单位重量 260.370 mg 可售卖地 全国 类型 Power MOSFET 型号 FDD4243 PD...
12V-100V Trench P Channel Power MOSFET Description Trench MOSFET：Key Features •High cell density design •Ideal for miniaturized packages •G-S ESD protection embedded •Voltage range: 12V-200V SGT MOSFET Key Features •Advance shield gate trench technology •Ultra low gate charge •...