Mosfet的参数"power dissipation"，指的是该元件在正常工作状态下，当外部散热条件良好时，它能够安全处理的最大功率转换成热量的能力。具体到310W这个数值，它意味着在理想的散热条件下，该Mosfet能够稳定地消耗或转化为热量的功率上限是310瓦特。这个参数对于选择和设计电路系统至关重要，因为它可以帮助我们...
求教Mosfet的参数power dissipation具体什么含义!例如FQA28N50 (MOSFET) 500V/28.4A/310W他的Vds=500v Ids=28.4a,表示他可以承受500的管压和28.4的电流通过;那这个310W的power dissipatio 功耗?允许310W的功率通过它?不懂! 答案 最大耗散功率310W:在外部散热条件完美的前提下,自身可承受310W的功率(发热量～～...
W. Potzl, "Temperature distribution and power dissipation in MOSFET's," Solid-State Electron., vol. 27, pp. 394-395, Apr. 1984.Selberherr S.et al.Temperature Distribution and Power Dissipation in MOSFETs. Solid State Electronics . 1984...
power dissipation 指的是什么情况下的损耗?irfz44n中power dissipation 有110w(max),为什么会有这么大损耗! 谢谢
最大耗散功率310W：在外部散热条件完美的前提下，自身可承受310W的功率（发热量～～）。
Theoretical or Mathematical, Experimental/ cooling field effect integrated circuits insulated gate field effect transistors thermal resistance/ VLSI MOSFET differential equations heat sinking power dissipation temperature distribution small scale MOS-transistors heat-flow equation two dimensions finite difference met...
AN2385 Application note Power dissipation and its linear derating factor, silicon Limited Drain Current and pulsed drain current in MOSFETs Introduction Datasheets of the modern power MOSFET devices, either of low voltage or of high vol...
The comparative study in the transient power capability between two different device structures provides interesting clues to understand the problem of the power dissipation mechanics of the power devices 展开 关键词: power MOSFET semiconductor device breakdown semiconductor device models semiconductor device ...
Because a MOSFET's power dissipation depends greatly on its on-resistance, RDS(ON), calculating RDS(ON)seems a good place to start. But a MOSFET's RDS(ON)depends on its junction temperature, TJ. In turn, TJdepends on both the power dissipated in the MOSFET and the thermal r...
Power Dissipation Odyssey Power Dissipation Odyssey 一旦面对尺度和复杂性的双重困难,建构论假设自然会站不住脚。大型和复杂的基本粒子集合体的行为,并不能按照少数基本粒子性质的简单外推来理解。事实上,在复杂性的每一个层次,都会有崭新的性质出现;在我看来,为理解这些新行为所进行的研究,本质上是同样基础性的。