关键词:沟槽,场效应,栅极,多晶硅,空隙缺陷,工艺优化 Abstract In recent years, many electronic devices toward smaller and smaller while the efficiency is increased accordingly direction. Trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology is developed in such a context . Is a ...
MOSFET表面势解析近似方法的改进(英文).pdf阅读:11次|页数:4页|上传:2016-07-02 22:11 第27卷 第7期2006年7月半 导体学报CHINESEJOURNALOFSEMICONDUCTORSVol.27 No.7July,2006*ProjectsupportedbytheNationalNaturalScienceFoundationofChina(No.60476012),theFundofSoutheastUniversity(No.XJ0404142),andtheNational...
MOSFET导通电阻偏高因素的测试分析和解决途径的研究
solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced ...
The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. 4、A special ...
类似说明 - FDP023N08B 制造商部件名数据表功能描述 Fairchild SemiconductorFDD20AN06_F085 325Kb/11PN-Channel PowerTrench MOSFET ON SemiconductorFDWS86380_F085 528Kb/8PN-Channel PowerTrench MOSFET December, 2016, Rev. 1.0 FDD86369 1Mb/8PN-Channel PowerTrench MOSFET ...
高速MOSFET栅极驱动电路的设计与应用指南 高速MOSFE MOSFET T栅极驱动电路的设计与应用指南摘要 本文将展示一个用来设计高速开关应用所需的高性能栅极驱动电路的系统性方案。它综合了各方面的信息，可一次性解决一些最常见的设计问题。因此，各个层面的电力电子工程师都值得一读。文中分析了一些最流行的电路方案及其性能，...
The well known problems in a buck converter are overshoot and EMI issues. The overshoot problem, appearing during the high-side turn-on inbetween two MOSFETs, is adressed within the buck converter. Three possible solutions for solving the problems are shown: improve the ...
Specifically, the HVMOSFET devices 10 having drift regions 51. Insomuch as prior art solutions involve complete processing with possible critical steps, such as relatively very narrow gaps or lightly doped rings, they cause to be economically or technically viable with higher levels of integration ...
The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure...