The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. ...
页数:223 定价:$ 145.77 ISBN:9789400767980 豆瓣评分 目前无人评价 评价: 推荐 内容简介· ··· Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing...
In the past, imec already proved the potential of poly-SiGe for MEMS-above-CMOS integration by presenting, for example, an integrated poly-SiGe micromirror array and an integrated gyroscope , both of them fabricated on top of Al-based CMOS. However, the aggressive interconnect scaling, essential...
最后根据微晶和多晶硅锗薄膜不同的能带结构,设计并制备出μc-SiGe/poly-SiGe/ZnO多层结构薄膜,研究结果表明微晶层的加入可显著提高薄膜的光吸收性能,但降低力学性能,通过沉积微晶层和ZnO中间层二者结合的方法可进一步改善薄膜的光吸收性能。 展开 关键词:太阳电池 磁控溅射 硅锗薄膜 光吸收性能 力学性能 ...
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Au-induced low-temperature (400 °C) crystallization of amorphous-SiGe(: 0–1) thin films on SiOhas been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 m/h was obtained in all Ge fractions. As a result, strain-free poly-SiGewith...
外加偏压对未退火Co/n-poly-SiGe肖特基接触特性的影响 王光伟1,2姚素英1徐文慧2马兴兵2 1.天津大学电信学院,天津300072;2.天津职业技术师范大学电子工程学院,天津300222 摘要:采用直流离子束溅射法,在n型单晶硅衬底上淀积Si1-xGex薄膜。俄歇电子谱AES 测得Si1-xGex 薄膜的Ge含量约为0.15。对薄膜进行高温磷扩散...
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采用直流离子束溅射法,在n型单晶硅衬底上淀积Si1-xGex 薄膜.俄歇电子谱(AES)测得Si1-xGex薄膜的Ge含量约为0.15.对薄膜进行高温磷扩散后,经XRD测试为多晶态,即得n-poly- Si0.85Ge0.15.在n-poly-Si0.85Ge0.15上溅射一层薄的Co膜,做成Co/n-poly-Si085Ge0.15肖特基结样 品.在90～332 K范围对未退火样...