多晶硅栅(Poly-Si Gate) 多晶硅栅的形成是集成电路工艺中最关键的步骤,因为它包括了最薄的栅氧化层的热生长(干氧和湿氧),形成多晶硅栅的先进且复杂的光刻技术和干法刻蚀技术,以及需要精确控制且复杂的侧墙工艺。 多晶硅栅结构通常是一代集成电路工艺中物理尺度最小的结构,也是形成晶体管的关键。多晶硅栅形成的一般...
PURPOSE: To provide a gate electrode to suppress the variation of characteristics of an element due to the diffusion of boron from a P(+) Poly-Si gate electrode and at the same time to achieve the low-resistance of the gate electrode itself and manufacture thereof.ISHIDA MAMORU...
多晶硅薄膜晶体管也就是采用多晶硅(poly-Si)作为有源层的一种TFT。器件的结构与a-Si∶H TFT类似,如图所示。 blog.163.com|基于502个网页 2. 多晶矽 由于多晶矽(Poly-Si)的电子迁移率约为非晶矽的100倍,面板像素反应时间比非晶矽快10倍;且低温多晶矽的开口率较高, … ...
The depletion effects of gate poly-Si are investigated in detail taking into consideration the fact that many-body effects due to carrier-carrier and carrier-ion interactions are different at the surface than in a bulk of the gate poly-Si. All calculations are self-consistently performed including...
The instant invention relates to an improved thin film transistor having reduced off state leakage current where the front gate consists of two materials and three sections in order to reduce the OFF state leakage current without affecting the ON state voltage. One and three grain- boundaries in ...
0.5 μm channel Al/WSix/Poly-Si gate performance in high-frequency (900 MHz and 1.9 GHz) band Si power MOSFETs is analyzed with Process/Device/Circuit continuous simulation. In case the upper Al electrode is separated enough from the most heated channel (the WSix/Poly-Si gate height is mor...
Fabricatc poly-s⒘sioN CMOs Rcmovc po1yˉ si/SiON Depos"high-k and metal gate and CMP to cxpose gatc 很多高pH值的溶液已知可作为⒏的刻蚀剂,如无机水溶性的K()H、NaOH、CsOH、NH10H以及有机水溶性的乙二胺、choline和四甲基氢氧化铵(TMAH)。稀释的氨水和TMAH已普遍作为Sl刻蚀剂,是因为它们对CMOS...
1. 多晶矽 多晶矽(Poly Si)与单晶矽(a-Si)的差异主要就在矽晶体的排列方式,多晶矽的分子结构的排列状况是整齐有方向性的,与非晶矽 … www.moneydj.com|基于58个网页 2. 多晶硅 多晶硅(Poly Si)TFTLCD与非晶硅(a-Si)TFTLCD特性差异大, 多晶硅提升电子迁移率达200(cm2/V sec),反应时间快10倍以上 …...
The morphology of gate poly-Si was found to be critical for achieving fully functional 4-Mb SRAM dies with 0.18-/spl mu/m complementary metal-oxide-semiconductor (CMOS) process. Although the functionality of 4-Mb SRAM had been achieved with as-deposited poly-Si gate, it is highly likely th...
The gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with single-crystal-like nanowire (NW) channels (SCLNCs) are demonstrated and characterized. Via the nanoscale nitride spacer, the Si NW can be easily transformed within one crystalline grain of the two-shot sequential-lateral-sol...