According to the device, the breakdown voltage of the main PN junction can reach ideal plane breakdown, so that the PN junction reverse breakdown voltage can be improved.张睿秦明
PURPOSE: A SEMICONDUCTOR DEVICE for obtaining a high PN junction diode reverse breakdown voltage by reducing voltage dependency of a capacitor. CONSTITUTION: A second conductive type first well(2) is formed on a surface of a first conductive type semiconductor substrate(1). A second conductive type...
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Electron injection characteristics of MNOS nonvolatile semiconductor memory structure using the reverse breakdown of the PN junction This voltage drop was produced by the current flow due to reverse breakdown of the pn junction. Faster, stronger carrier injection from the Si surface ... K Ohnishi,K...
The reverse saturation current is the negligibly small current (in the range of micro amperes) shown in graph, from 0 volts to break down voltage. It remains almost constant (negligible increase do exist) in the range of 0 volts to reverse breakdown voltage.How it occurs ?We know, as el...
A method for the manufacture of a pn junction having a high breakdown voltage at the boundary surface of a semiconductor body, utilizing a mask which has a relatively large opening for introducing a dopant therethrough into the semiconductor body, the mask having a marginal edge which extends la...
junction (means its depletion layer width is high). Avalanche breakdown usually occurs when we apply a high reverse voltage across the diode (obviously higher than the zener breakdown voltage,say Vz). So as we increase the applied reverse voltage, the electric field across junction will keep ...
r = 11.7.Solution:From the cross-section area A = 2x10-4 cm2, we have 6.4 Junction BreakdownAn applied reverse bias (voltage) will result in a small current to flow through the device. At a particular high voltage value, which is called as breakdown voltage VB, large currents start to...
The Vbi of a PN junction diode can be measured using a voltmeter. The diode is connected in reverse bias (negative terminal of the voltmeter to the P-layer and positive terminal to the N-layer) and the voltage across the diode is measured. This voltage is equal to the built-in potential...