Grasser, Physics-based hot-carrier degradation models (invited). ECS Trans. 35(4), 321-352 (2011)S. Tyaginov, I. Starkov, H. Enichlmair, J. Park, C. Jungemann, and T. Grasser, "Physics-Based Hot-Carrier Degradation Models (invited)," ECS Trans., vol. 35, no. 4, pp. 321-...
S. Tyaginov, Physics-based modeling of hot-carrier degradation, in Hot Carrier Degradation in Semiconductor Devices, ed. by T. Grasser. (Springer, Cham, 2014)S. Tyaginov, Physics-based modeling of hot-carrier degradation, in Hot Carrier Degradation in Semiconductor Devices , this volume, ed....
We present a thorough analysis of physics-based hot-carrier degradation (HCD) models. We discuss the main features of HCD such as its strong localization at the drain side of the device, the weakening of the degradation at higher temperatures, and the change of the worst-case condition in sm...
We present and verify a physics-based model of hot-carrier degradation (HCD). This model is based on a thorough solution of the Boltzmann transport equation. Such a solution can be achieved using either a stochastic solver based on the Monte Carlo approach or a deterministic counterpart that is...
J. Z. Peng, Q. Lin, P. Fang, M. Kwan, S. Longcor, and J. Lien, "Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models," in Proc. IEEE IRPS, 1994, pp. 154-160....
A novel unified field-dependent oxide charge generation (FDG) model is introduced to consistently simulate oxide degradation due to Fowler Nordheim (FN) tunneling and hot carrier injection (HCI) stresses over a wide range of oxide field intensity. This model, combined with an interface charge ...
This is combined with existing models for BTI, and simulation results show the combined impact of both BTI and HC effects on circuit delay degradation over time.;In the last year or two, the accepted models for BTI have also gone through a remarkable shift, and this is addressed in the ...
The decreasing feature sizes, coupled with non-ideal voltage scaling, raises new reliability concerns such as negative bias temperature instability (NBTI) and adversely affects those long-existed failure mechanisms: electromigration (EM), hot carrier degradation (HCD) and time dependent dielectric ...
Investigation of hot carrier degradation in bulk FinFET. In Proceedings of the 2017 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2–6 April 2017; pp. XT-6.1–XT-6.4. [Google Scholar] Sharma, U.; Mahapatra, S. A SPICE compatible compact model for hot-carrier...