S. Tyaginov, Physics-based modeling of hot-carrier degradation, in Hot Carrier Degradation in Semiconductor Devices, ed. by T. Grasser. (Springer, Cham, 2014)S. Tyaginov, Physics-based modeling of hot-carrier d
used hot deformation to introduce material defects, such as dislocations, point defects, and grain boundaries, into p-type (Bi,Sb)2Te3. Those defects are well known to harden materials [67–69]. Moreover, they can also modify the carrier concentration and reduce the thermal conductivity, ...
J. Z. Peng, Q. Lin, P. Fang, M. Kwan, S. Longcor, and J. Lien, "Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models," in Proc. IEEE IRPS, 1994, pp. 154-160....
A novel unified field-dependent oxide charge generation (FDG) model is introduced to consistently simulate oxide degradation due to Fowler Nordheim (FN) tunneling and hot carrier injection (HCI) stresses over a wide range of oxide field intensity. This model, combined with an interface charge ...
This is combined with existing models for BTI, and simulation results show the combined impact of both BTI and HC effects on circuit delay degradation over time.;In the last year or two, the accepted models for BTI have also gone through a remarkable shift, and this is addressed in the ...
The decreasing feature sizes, coupled with non-ideal voltage scaling, raises new reliability concerns such as negative bias temperature instability (NBTI) and adversely affects those long-existed failure mechanisms: electromigration (EM), hot carrier degradation (HCD) and time dependent dielectric ...