S. Tyaginov, Physics-based modeling of hot-carrier degradation, in Hot Carrier Degradation in Semiconductor Devices, ed. by T. Grasser. (Springer, Cham, 2014)S. Tyaginov, Physics-based modeling of hot-carrier d
To conduct realistic assessment of the represented IC technology in ECAD, many important reliability issues, such as parasitic effects, quantum mechanisms, bias temperature instability (BTI), hot carrier degradation (HCD), gate leakage, and kink effects, have to be incorporated in TCAD simulations. ...
Optical-fibre links allow the most precise optical clocks to be compared, without degradation, over intracontinental distances up to thousands of kilometres, but intercontinental comparisons remain limited by the performance of satellite transfer techniques. Here we show that very long baseline ...
Additionally, exploring the use of PINNs to address system degradation in electrolysis could be a significant area for future research. 6. Conclusion In engineering, underlying models are often unknown and must be discovered through systematic investigation. This process involves identifying various ...
2.6 Hot carrier effect/hot carrier injection 2.7 Velocity overshoot 2.8 Gate-induced drain leakage 2.9 Direct source to drain tunneling 2.10 Mitigation of short channel effects 2.10.1 Gate engineering 2.10.2 Dual-material gate 2.10.2.1 Structure and operation ...
This article reviews the recent progress towards achieving carbon-based thermoelectric materials. A wide range of experimental and computational studies on carbon allotropes and composites is covered...
We show that the problem can be conditionally separated into three main subtasks: the carrier transport aspect, the kinetics of defect generation, and modeling of the degraded devices. From this perspective, the most important physics-based models and their validity are discussed. In order to ...
J. Z. Peng, Q. Lin, P. Fang, M. Kwan, S. Longcor, and J. Lien, "Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models," in Proc. IEEE IRPS, 1994, pp. 154-160....
Critical thicknesses are compared for equilibrium models (Matthews-Blakeslee, > 750°C) with fit curves for 550°C growth experiments (People-Bean). The most important factors for successful silicon based heterodevices are analyzed, and as attractive areas for future research are defined; hetero...
Models that neglect these complications are often useful at intermediate carrier concentrations or within narrow gate-voltage ranges, but they fail both at high and low carrier concentrations. In these regimes, the carrier mobility and the gate-channel capacitance in OECTs depend strongly on the ...