Pulse measurements,HEMTs,Scattering parameters,Transistors,Integrated circuit modeling,MODFETs,Gallium nitrideThis paper presents a drain-lag model for GaN HEMTs, enhancing the simulation accuracy of the physics-based compact model ASM-HEMT. The proposed trap model requires a minimum number of ...
Full-wave modeling of THz RTD-gated GaN HEMTs Sai N. Tenneti, Niru K. Nahar, John L. Volakis Pages 221-228 Article preview select article Influence of anisotropic turbulence on the long-range imaging system by the MTF model Research articleAbstract only Influence of anisotropic turbulence on ...
Thermodynamic Study of Sn-Ag-Ti Active Filler Metals Yu Tang, Guoyuan Li Pages 30-35 View PDF Article preview select article A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N/GaN-based HEMTs Research articleOpen access A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N...
Taylor, J., Guo, H. & Wang, J. Ab initio modeling of quantum transport properties of molecular electronic devices.Phys. Rev. B63, 245407 (2001). ADSGoogle Scholar NanoDCAL Package(Nanoacademic Technologies, 2024);https://nanoacademic.com/solutions/nanodcal/. ...
We report on the influence of incorporation of Ta2O5 thin film at the interface of Au/GaN by means of e-beam evaporation technique. The fabricated Au/Ta2O5
compact modelinghigh-voltageaccess regionsA new physics based transport and charge model for long channel GaN HEMTs is proposed. The model is based on the concept of virtual source (VS) carrier transport (A. Khakifirooz et al., IEEE-TED 56(8), 1674 (2009) [1]) and is extended to ...
Then, the dependence of electron concentration on the nanowire channel width is studied by Silvaco simulation software. With the nanowire channel width decreasing, the electron concentration reduces. Finally, we recognize the threshold voltage model of conventional HEMT for NC-HEMT modeling, and the ...
S. Chauhan, ``Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow,'' IEEE J. Electron Devices Soc., vol. 5, no. 5, pp. 310-319, Sep. 2017.Ahsan, S.A.; Ghosh, S.; Khandelwal, S.; Chauhan, Y.S. Physics-based multi-bias RF large-signal ...
Characterization and modeling of Single Event Transient propagation through standard combinational cells Marko Andjelkovic, Milos KrsticNovember 2023 Article 115080 Article preview select article Online die temperature measurement using S-parameters in GaN-based power converters Research articleAbstract only Onli...
Toward understanding the impacts of dynamic Ronon the efficiency in GaN-based AC-DC flyback converter Chih-Yao Chang, Hsing-Hua Hsieh, Cheng-Tsung Ho, Tsung-Hsiu Wu, ... Tian-Li Wu May 2025 Article 115692 select article On the influence of the porosity and homogeneity of sintered die-atta...