\\{HEMTs\\}SemiconductordevicemodelingA new model for the gate leakage current in AlGaN/GaN \\{HFETs\\} is demonstrated. The model is completely physical and is based on the formulation of space charge limited current flow. Two levels of shallow traps in the AlGaN surface layer are ...
In this paper, a consistent DC to RF modeling solution for AlGaN/GaN High Electron Mobility Transistors (HEMTs) is demonstrated that is constructed around a surface-potential-based core reported in [1]. Expressions for drain current and intrinsic terminal charges in the form of surface-potential...
Thermodynamic Study of Sn-Ag-Ti Active Filler Metals Yu Tang, Guoyuan Li Pages 30-35 View PDF Article preview select article A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N/GaN-based HEMTs Research articleOpen access A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N...
S. Bajaj, O.F. Shoron, P.S. Park, S. Krishnamoorthy, F. Akyol, T.-H. Hung, S. Reza, E.M. Chumbes, J. Khurgin, S. Rajan, Density-dependent electron transport and precise modeling of GaN high electron mobility transistors. Appl. Phys. Lett.107, 153504 (2015) ADSGoogle Scholar ...
We report on the influence of incorporation of Ta2O5 thin film at the interface of Au/GaN by means of e-beam evaporation technique. The fabricated Au/Ta2O5
compact modelinghigh-voltageaccess regionsA new physics based transport and charge model for long channel GaN HEMTs is proposed. The model is based on the concept of virtual source (VS) carrier transport (A. Khakifirooz et al., IEEE-TED 56(8), 1674 (2009) [1]) and is extended to ...
Then, the dependence of electron concentration on the nanowire channel width is studied by Silvaco simulation software. With the nanowire channel width decreasing, the electron concentration reduces. Finally, we recognize the threshold voltage model of conventional HEMT for NC‐HEMT modeling, and the ...
Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow. IEEE J. Electron Devices Soc. 2017, 5, 310-319. [CrossRef]S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, ``Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter ...
Modeling and analysis of the catastrophic failure and degradation data Seung-Hyun Kim, Si-Il Sung Article 113764 select article A reliability evaluation method for multi-performance degradation products based on the Wiener process and Copula function ...
Therefore, the accurate and physics-based modeling of the high-frequency noise of modern CMOS devices is essential [3,4,5,6,7]. The HF noise sources in MOSFETs include the thermal drain current noise, due to the channel resistance, giving rise to the induced gate noise and the ...