semiconductor field effect transistors (MESFETs) and heterojunction bipolar transistors (HBTs) can occur during plasma enhanced chemical vapor deposition (PECVD) of SiN X passivation films through the hydrogen passivation of dopants or creation of deep traps by ion bombardment or preferential loss of ...
Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiNx, which yields 5.9. We estimate the wafer-to-...
By doing this, PECVD waveguides with optical loss <0.2dB/cm have been produced without the need for doping or high temperature anneal steps.For automotive and facial recognition sensing, infrared wavelengths are used. At longer wavelengths, silica becomes too lossy for practical use and so other ...
4.氮化硅(sin)用pecvd方法制备的氮化硅薄膜,不仅折射率非常适合(n=2.0),而且还可以获得很好的表面和体钝化效果。如表 1.2【5】所示,sio2,tio2和sin作为减反射膜的太阳能电池性能比较。从表1.2可以看出,氮化硅,二氧化钦作减反射膜和二氧化硅相比,电流密度与开路电压均提高很大,因此效率有很大提高。而氮化 21、硅...
Silicon nitride is an excellent functional material; it has good dielectric properties (low dielectric constant, low loss), high insulation, and the high density of silicon nitride have good blocking ability off impurity ions, even in small sizes Na+. Therefore, the silicon nitride used as an ...
there comes a point when θ2=π/2 radians. This happens when θ1=sin−1(n2/n1). For larger values of θ1, there is no refracted ray, and all the energy from the incident ray is reflected. This phenomena is called total internal reflection. The smallest angle for which there is tot...
首先,对于超大规模集成电路(VLSI、ULSI)制作来说,Al电极布线形成之后,作为最终保护膜的硅氮化膜(SiN)的形成,以及为了平坦化,作为层间绝缘膜的硅氧化膜的形成等,都成功地采用了PECVD技术。而且,作为薄膜器件,以玻璃为基板的有源矩阵(activematrix)方式的LCD显示器用薄膜三极管(TFT)的制作等,也成功地采用了PECVD的...
staticmagneticparameterBsandHc.Basicmethods eregiventoobtainhighpermeabilityandlo lossatmicro avefre uency. Thesenanomagneticmultilayerfilmscanbeapplied idelytohighfre uencyplanetransformers planeinductorsandfilminterference suppresser. Keyword : nanomagneticfilm multilayer microwavepermeabilit ～～～ y <上接第...
The gradual decrease in the calculated DDR value from the static profiles with increasing gas flow is mainly attributed to a slight increase in the gas loss due to stronger convection, see Fig. 2. Download: Download high-res image (280KB) Download: Download full-size image Fig. 2. Local ...
Some sub-micron (400nm??700nm) waveguides were fabricated using corresponding optimal SiN films. The propagation loss is found to be as less as ~-2.12dB/cm at 1550nm. The whole waveguide fabrication of process was at low temperature. It is indicated that low hydrogen SiN waveguide ...