This result is in agreement with the transport measurements on PDI8-CN2 field effect transistors, which show an 'always on' behavior. We also found evidences of the formation of a built-in potential in T6 / PDI8-CN2 and PDI8-CN2 / T6 interfaces, mainly from the T6 side. This also ...
PDI8-CN2Thin filmExcimer emissionGXRDAFMPhotoexcited ultra-thin films of the organic semiconductor N,N'-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis dicarboximide (DPI8-CN2), grown on thermal Si/SiO2, exhibit an intense room temperature emission, strongly dependent on molecular coverage, even ...
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E. SarnelliCNR-SPINA. CassineseCNR-SPIN and Physics DepartmentOrganic ElectronicsF. Chiarella, M. Barra, A. Carella, L. Parlato, E. Sarnelli, and A. Cassinese, "Contact-resistance effects in PDI8-CN2 n-type thin- film transistors investigated by Kelvin-probe potentiometry," Organic ...
In this paper, nanoscale organic two-terminal devices, based on evaporated films of a perylene diimide derivative (PDI8-CN2) and with channel lengths ranging from 1 μm down to 50 nm, have been fabricated by using Focused Ion Beam technique. Devices have been characterized in terms of ...
In this paper, we report on the fabrication of n-type bottom-gate bottom-contact transistors, based on evaporated films of a perylene diimide derivative (PDI8-CN2), displaying electrical performances...doi:10.1007/s00339-018-2130-3Parlato, Loredana...
Structure and morphology of PDI8-CN2 for n-type thin-film transistors. Liscio, Fabiola,Milita, Silvia,Albonetti, Cristiano,D’Angelo, Pasquale,Guagliardi, Antonietta,Masciocchi, Norberto,Della Valle, Raffaele Guido,Venuti, Elisabetta,Brillante, Aldo,Biscarini, Fabio. Advanced Functional Materials . ...