A hybrid technique using current-voltage (I–V) and capacitance-voltage (C–V) measurements was proposed recently in [57]. In Fig. 9 an equivalent circuit for TFTs with resistances and capacitances is shown. Cox is the gate capacitance, Cov is the overlap capacitance, Cch is the distribute...
The present invention relates to the field of CMOS imagers and, more particularly, to methods and circuits for noise and parasitic capacitance reduction for a passive pixel sensor (PPS) array. BACKGROUND OF THE INVENTION Image sensors find applications in a wide variety of fields, including machin...
the bit line spacer comprises a nitride layer so as to secure etching selectivity with respect to an interlayer dielectric comprising an oxide-based layer. In this regard, because the nitride layer has high dielectric constant compared to the oxide layer, the capacitance between the bit line and...
PROBLEM TO BE SOLVED: To disclose a system that includes a quantum bit array with a plurality of quantum bits.;SOLUTION: Each quantum bit of a quantum bit array comprises: a first electrode corresponding to a first node; and a second electrode corresponding to a second node. With respect ...
The condenser is integrated by TIA, at the same time is connected with to power source and the internal ground of TIA. Noise with respect to power source of the trance impedance amplifier, in order for power source noise to be decreased, the filter is processed by the condenser. The ...
The condenser is integrated by TIA, at the same time is connected with to power source and the internal ground of TIA. Noise with respect to power source of the trance impedance amplifier, in order for power source noise to be decreased, the filter is processed by the condenser. The ...
PURPOSE: A switching device and a switching device manufacturing method are provided to reduce the parasitic gate-ground capacitance of a device, thereby reducing nonlinearity such as second harmonic wave and inter-modulation distortion with respect to the device.;CONSTITUTION: A field effect transistor...
13.The method of claim 11, wherein the main beam direction and the null direction are specified in at least one of: azimuth or elevation with respect to the ground plane. 14.The method of claim 11, wherein the RF load selectively applicable to each of the array of parasitic elements is...
A device (110) includes a sensing element (26) having drive nodes (34, 36) and sense nodes (42, 44). Parasitic capacitance (22) is present between drive node (34) and sense node (42). Likewise, parasi
In either process, a gate spacer composed of a dielectric material such as, for example, silicon dioxide, is typically present on the vertical sidewalls of the functional gate structure. The presence of a gate spacer is a source of parasitic capacitance that is under the Miller effect. There...