A hybrid technique using current-voltage (I–V) and capacitance-voltage (C–V) measurements was proposed recently in [57]. In Fig. 9 an equivalent circuit for TFTs with resistances and capacitances is shown. Cox is the gate capacitance, Cov is the overlap capacitance, Cch is the distribute...
The present invention relates to the field of CMOS imagers and, more particularly, to methods and circuits for noise and parasitic capacitance reduction for a passive pixel sensor (PPS) array. BACKGROUND OF THE INVENTION Image sensors find applications in a wide variety of fields, including machin...
2, contain two types of parasitic capacitance; the stray capacitance of the resistor body (Cp) and resistor-to-sub- strate capacitance (Cs) [7]. For the simulation and analysis (Fig. 2), the input signal is applied at node 1 or 2 and the substrate is connected to ground (common ...
In either process, a gate spacer composed of a dielectric material such as, for example, silicon dioxide, is typically present on the vertical sidewalls of the functional gate structure. The presence of a gate spacer is a source of parasitic capacitance that is under the Miller effect. There...
PROBLEM TO BE SOLVED: To disclose a system that includes a quantum bit array with a plurality of quantum bits.;SOLUTION: Each quantum bit of a quantum bit array comprises: a first electrode corresponding to a first node; and a second electrode corresponding to a second node. With respect ...
The condenser is integrated by TIA, at the same time is connected with to power source and the internal ground of TIA. Noise with respect to power source of the trance impedance amplifier, in order for power source noise to be decreased, the filter is processed by the condenser. The ...
The condenser is integrated by TIA, at the same time is connected with to power source and the internal ground of TIA. Noise with respect to power source of the trance impedance amplifier, in order for power source noise to be decreased, the filter is processed by the condenser. The ...
PURPOSE: A switching device and a switching device manufacturing method are provided to reduce the parasitic gate-ground capacitance of a device, thereby reducing nonlinearity such as second harmonic wave and inter-modulation distortion with respect to the device.;CONSTITUTION: A field effect transistor...
surface of a pixel electrode overlapping the at least one address line uneven, and wherein the at least one of bends, notches, protrusions, and holes are formed in order to reduce area where the pixel electrode overlaps the at least one address line so as to minimize parasitic capacitance....
Semiconductor Memory Device Including Plurality of Global Data Lines in Parallel Arrangement with Low Parasitic Capacitance, and Fabrication Method Thereof.Claims: What is claimed is: 1. A semiconductor memory device formed on a semiconductor substrate, comprising: a plurality of memory cells arranged in...