# now use these default parameter values in the parameter definitions specs('tranType', tranType, 'MOSFET type (pmos or nmos)', ChoiceConstraint(['pmos', 'nmos'])) specs('oxide', oxide, 'Oxide (thin or thick)', ChoiceConstraint(['thin', 'thick'])) specs('width', width, 'device ...
Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 - - V Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics(Note 3) Gate Thresho...
系列系列PMOSFETDMOSMEM2311SG -30V/-6ARDS(ON)=52m @VGS=-10V,ID=-6ARDS(ON)=67m @VGS=-4.5V,ID=-4A RDS(ON) SOP8 25.microne.com.cn025-84731186P-MOSFETMEM2311SGVer01主要参数及工作特性主要参数及工作特性主要参数及工作特性主要参数及工作特性:MEM2311SGParameterSymbolTestConditionMinTypeMaxUnitV...
氧化铝P型垂直DMOS高效模拟MOSFET ZVP3310F说明书 ZVP3310F Document number: DS33406 Rev. 5 - 2 1 of 5 www.diodes.com August 2019 © Diodes Incorporated Description and Applications This MOSFET is designed to minimize the on-state resistance (R DS(ON)) and yet maintain superior switching ...
查询STB20NM60供应商 STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STP20NM60 600 V 0.29 Ω 20 A STP20NM60...
The MOSFET symbol attached to the cursor is ready for placement on the schematic page. Every mouse click places one part symbol at a desired location. See figure 9.Vishay SiliconixDocument Number: 65038 www.vishay.com Revision: 02-Jun-09 3APPLICATION NOTEOn the schematic page, click the tab...
MEM2311SG 系列系列 双双沟道沟道 系列系列 描述描述:: 特点特点:: 描述描述:: 特点特点:: MEM2311SG 系列系列 双 P 沟道增强型功率 -30V/-6A 系列系列 R =52mΩ@ V =-10V,I =-6A 场效应管 MOSFET ),采用高单元密度的 DMOS DS(ON) GS D R =67mΩ@ V =-4.5V,I =-4A DS(ON) GS D ...
MOSFET Driver Error Amp. VOUT Thermal Shutdown Fixed Adjustable GND FB Functional Description Definitions Quiescent Bias Current Some important terminologies for LDO are specified Current which is used to operate the regulator chip and is below. not delivered to the load. The...
SSM3J328R RUIZEINC MOSFET P-CH 20V 6A SOT-23 MOSFET KFH SSM3J328R, You can get more details about SSM3J328R RUIZEINC MOSFET P-CH 20V 6A SOT-23 MOSFET KFH SSM3J328R from mobile site on Alibaba.com
20V P沟道增强型MOSFET(MOS管).pdf,20V P-Channel Enhancement-Mode MOSFET VDS= -20V XP2301L RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ 3 RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features Advanced trench process technology 1 High Density Cell Design For Ultra Lo