A type of MOSFET in which the channel is composed with a majority of charge carriers as holes is known as p channel MOSFET. Once this MOSFET is activated, then the majority of charge carriers like holes will move throughout the channel. This MOSFET is in contrast to N channel MOSFET becau...
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**Channel type:** P-Channel channel, suitable for P-Channel MOSFET, responsible for the part where current flows through the channel. 2. **Rated voltage:** -30V, which indicates the maximum voltage of MOSFET under normal working conditions. 3. **Maximum current:** -5.6A, indicating the ...
(VDS):** -30V - **Maximum Drain Current (ID):** -5.6A - **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V - **Threshold Voltage (Vth):** -1V **Application Introduction:** 3314-VB is a P-Channel trench MOSFET with excellent characteristics and is suitable for a ...
G7P03D2 P-type semiconductor mosfet 30V 7A power amplifiers online Part Number G7P03D2 VDSS -30V ID -7A RDS 21mΩ @ vgs=4.5V Vth 0.9V Package DFN2*2 Ciss 1900 pF Crss 150 pF Datasheet You may like For more products details, please contact us !...
If you have a complete working model but do not know which manufactured part to use, you can compare your plots to datasheets to help you decide. To enable this option, set the Modeling option parameter of the P-Channel MOSFET block to Threshold Based or Surface potential based. To plot ...
If you have a complete working model but do not know which manufactured part to use, you can compare your plots to datasheets to help you decide. To enable this option, set the Modeling option parameter of the P-Channel MOSFET block to Threshold Based or Surface potential based. To plot ...
Unit price:contact is;part number:STS10P3LLH6;original:YES;lead time:1-3 working day;Place of Origin:CN;GUA;Type:-, integrated circuit;Brand Name:Original Brand;Mounting Type:SMD/DIP;Model Number:STS10P3LLH6;Features:-;Description:electronic component;Se
In this paper, the memristive switching behavior of Cu/ HfO2/p++ Si devices fabricated by an organic-polymer-assisted sol-gel spin-coating method, coupled with post-annealing and shadow-mask metal sputtering steps, is examined. HfO2 layers of about 190