P-Type and n-Type Doping for Polymer SemiconductorShin SakiyamaNaoki MizutaniKatsuhiko Fujita
Common doping materials or dopants for N-type semiconductors include phosphorus and arsenic, both of which have extra valence electrons(free electrons) compared to the host material (e.g., silicon). The extra electrons introduced by these dopants significantly increase the electron density in the cr...
The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial ...
参考资料：1.Xiong, W., Tang, W., Zhang, G. et al. Controllable p- and n-type behaviours in emissive perovskite semiconductors. Nature 633, 344–350 (2024). https://doi.org/10.1038/s41586-024-07792-4 2. Jiang, F., Ginger, D. Future optoelectronics unlocked by “doping” strategy....
无机材料可以通过掺杂获得双极性,比如:硅可以通过磷掺杂变为n型,通过硼掺杂变为p型,但是一个导电聚合物中通过化学掺杂的方法同时获得双极性仍然鲜有报道。有机导电高分子的极性取决于其结构,因而通常具有单一极性,即通常为p型材料或者n型材料。相对单极性导电高分子而言,极少数的导电高分子能在场效应晶体管器件中,...
网络型掺杂;P型掺杂;正型掺杂 网络释义 1. 型掺杂 插入反转控制器_馆档网 ... "p-type conductivity" 型导电性" "p-type doping"型掺杂" "p-type semi-conductor" 型半导体" ... www.guandang.com|基于5个网页 2. P型掺杂 p型掺杂,p... ... ) p-doping p型掺杂 )p-type dopingP型掺杂) ...
N-type doping: phosphorus ion implantation The FTIR absorption spectra for the undoped and phosphorus doped samples of both material types are depicted in Fig. 1. As we can see, the spectra for both exhibit the typical features of hydrogenated amorphous silicon carbide, whilst evidencing the chemi...
Within the accessible potential range, the maximum n‐doping level is of the maximum p‐doping level. At low p‐ and n‐doping levels, radicals are generated approximately linearly with injected charge, although the spin:charge ratio is substantially below unity. Linewidths indicate these spins ...
We present the results of first-principles theoretical calculations for the N compensation mechanism in ZnO. We find that N acceptors are mainly compensated by O vacancies, N-2 molecules at anion sites. and N-acceptor-Zn-antisite complexes, which limit p-type doping. In ZnO codoped with N ...
In fact, the electrical properties of h-BN can be controlled by doping, which can be N type doping and P type doping [116–120] (see Table 1). Table 1. Summarizes the experiments and examples of the influence of doping on the electronic properties of two-dimensional boron nitride in ...