Ferreira da Silva, Bandgap narrowing in silicon solar cells considering the p-type doping material, Solid State Electron. 41 (1997) 121e124.P. Nubile and A. Ferreira da Silva, "Bandgap narrowing in silicon solar cells considering the p-type doping material," Solid-State Electron., vol. 41...
For P-type doping, the impurity level (acceptor level) is an empty band that energy is lower than the HOMO, where an electron can jump to the impurity level and create a hole to conduct electricity. From: Encyclopedia of Materials: Electronics, 2023 ...
To make a p-type of semiconductor material you need a doping material that is ( ).A.p
www.nature.com/scientificreports OPEN received: 08 April 2016 accepted: 01 August 2016 Published: 23 August 2016 Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides Zhiqiang Liu1,2,Yang Huang1,2, Xiaoyan Yi1,2, Binglei...
These semiconductors are made through doping the semiconductor material. The small amount of impurity is added compared with the amount of semiconductor. By altering the dopant amount which is added, the precise character of the semiconductor will be changed. In this type of semiconductor, the numbe...
type elements into the ZnO films with high efficiency.Therefore it is difficult to obtain the p-type ZnO.In this paper, the theory of p-type doping and the resent doping methods used by different groups were reviewed and the fabrication methods and the characteristics of p-type ZnO were ...
A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition ... S Guha,SR Ovshinsky - US 被引量: 381发表: 1990年 Efficient Acceptor Doping of Sputter-Deposited pType Ni x Ga1–x O Rocksalt Alloy with...
ZnO film is the third generation semiconductor functional material) whose high quality p-type doping is the key for developing optoelectronic devices. ZnO薄膜作为第三代半导体功能材料,高质量的p型掺杂是基于光电器件应用的关键。 3. In order to fabricate such optoelectronic devices, the key problem of...
Apart from the low formation energy of the electron donor, incorporating foreign atoms could inevitably perturb the host lattice thermodynamic equilibrium, possibly counteracting the p-doping effect14. These factors restrict the tuning feasibility on hole density and mobility of conventional p-type thin ...
Substitutional and interstitial impurity p-type doping of thermoelectric Mg 2 Si: a theoretical study The narrow-gap magnesium silicide semiconductor Mg2Si is a promising mid-temperature (600-900K) thermoelectric material. It intrinsically possesses n-type ... N Hirayama,T Iida,M Sakamoto,... -...