For P-type doping, the impurity level (acceptor level) is an empty band that energy is lower than the HOMO, where an electron can jump to the impurity level and create a hole to conduct electricity. From: Encyclopedia of Materials: Electronics, 2023 ...
Ferreira da Silva, Bandgap narrowing in silicon solar cells considering the p-type doping material, Solid State Electron. 41 (1997) 121e124.P. Nubile and A. Ferreira da Silva, "Bandgap narrowing in silicon solar cells considering the p-type doping material," Solid-State Electron., vol. 41...
ZnO film is the third generation semiconductor functional material) whose high qualityp-type dopingis the key for developing optoelectronic devices. ZnO薄膜作为第三代半导体功能材料,高质量的p型掺杂是基于光电器件应用的关键。 3. In order to fabricate such optoelectronic devices, the key problem ofp-typ...
These semiconductors are made through doping the semiconductor material. The small amount of impurity is added compared with the amount of semiconductor. By altering the dopant amount which is added, the precise character of the semiconductor will be changed. In this type of semiconductor, the numbe...
The most natural choice of an acceptor dopant is N, substituting for O, and indeed several groups have been able to obtain p-type material by such doping. Surprisingly, however, other groups have also been successful with P and As, elements with much larger ionic radii than that of O. ...
p type doping p 型掺杂 p type semiconductor p 型半导体 p well diffusion p 阱形成扩散 p well mask p 阱形成掩膜 p+ guard ring p+ 型保护环 pack 部件 pack carrier television station 便携式电视发射机 package 外壳 package assembly 外壳组装 ...
p -type doping is a great challenge for the full utilization of ZnO as short-wavelength optoelectronic material. Due to a large electronegative characteri... J Li,SH Wei,SS Li,... - 《Physical Review B》 被引量: 345发表: 2006年 P-type doping with group-I elements and hydrogenation eff...
type elements into the ZnO films with high efficiency.Therefore it is difficult to obtain the p-type ZnO.In this paper, the theory of p-type doping and the resent doping methods used by different groups were reviewed and the fabrication methods and the characteristics of p-type ZnO were ...
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关键词:超晶格P型掺杂氮化镓MOCVDAbstractAbstractBasedonexcellentproperties,GaNmaterialhavebeenstudiedextensivelyandsystematicallyinthelastdecades.Buttherearestilllotsofproblemstobestudied,especiallyintheaspectofp-typedopinginGaN.Thispaperisperformedunderthisbackground.Inthispapertheproblemsoftheavailablemethodswereanalyzed,...