NDT454 P-channel Enhancement Mode Field Effect Transistor . NDT454P P-Channel Enhancement Mode Field Effect Transistor. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS
26Kb/2PMonolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Intersil Corporation3N165 4Mb/122PP-CHANNEL JFET New Jersey Semi-Conduct...3N165 123Kb/1P(SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT Micross Components3N165 ...
PNOtESwYL+LWTbd8vComWHAxDeCFi6YU7U6o3LzubOkOALyYnLw+tyS1ceXd5UOouvcchCrnJ5NK HINasV4ORaeV+3y1Qu0mFsF531NHOozf8C41OL64+eWaq3CUfVXh2NNpeCb7v+e+G/zz8Q6C7GHc 6EMhnOzcupMK5erqc2D6CqSIbry7x4PQ91mmtW6iLRN7oAch33cQ7Ac+CI8SWFCqKlD3Z84zY4PV f4V++OLdw4lDhyLeRVeVDdCXwSRkBVwMFEmT4...
厂商: ONSEMI(安森美) 封装: TO92-3 描述: JFET P-CH 30V 0.35W TO92 数据手册:下载P1086.pdf立即购买 数据手册 价格&库存 P1086 数据手册 切换侧栏 查找 上一页 下一页 / 3 演示模式打开当前在看 缩小 放大 ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 P1086 TO-92 D Abs...
TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 1MA I(DSS) | SC-75A 晶体管| JFET | N沟道| 55V V( BR ) DSS | 1MA我( DSS ) | SC- 75A\n 2SK2593P 数据手册 通过下载2SK2593P数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息...
N-channel 500 V, 0.070 Ω, 37 A MDmesh™ II Power MOSFET TO-247 热度: 相关推荐 2N5564/5565/5566 VishaySiliconix DocumentNumber:70254 S-04031—Rev.D,04-Jun-01 .vishay 8-1 MatchedN-ChannelJFETPairs PRODUCTSUMMARY PartNumberV GS(off) (V)V (BR)GSS Min(V)g fs Min(mS)I G Typ(...
Performance integrity of multi-channel designs is assured by a high level of amplifier-to-amplifier isolation (69dB at 10kHz). • Battery-PoweredEquipment Pinouts A wide range of supply voltages (±2V to±20V) can be used to power the HA-4741, making it compatible with almost any...
The PND element is modeled by an n-channel JFET (junction field effect transistor) because the basic structure of the PND element is similar to that of the n-channel JFET. However, it should be noted that the detailed structure of the PND element is not exactly the same as that of the...
Compared with planar-gate DMOS devices, trench-gate MOS devices eliminate the JFET region and the channel density can be made larger by using a smaller cell pith with a lower Ron and a higher power density [7]. However, when trench MOS devices operate in blocking mode, the exposed edge of...
通信/电子--无线电电子学/电信技术 文档标签: J310场效应管VGSDrainoffVoltageMHzVDSCurrentSST 系统标签: 场效应管siliconixgatefaxbackssttapeandreel J/SST/U308Series Siliconix S-52424—Rev.F,14-Apr-97 1 N-ChannelJFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 ProductSummary PartNumberV GS...