Crystalline semiconductor wafer with a small metal pill is heated so that the metal melts; then cooled, turned upside-down, and heated again to a temp. exceeding the adherence temp. whereby the metal reacts with the semiconductor substrate (the metal droplet does not fall away); finally, the...
Near the junction, electrons diffuse across to combine with holes, creating a depletion region. Steps to formation of depletion region In the p-type region there are holes from the acceptor impurities and in the n-type region there are extra electrons from the donor impurities. When a p-n j...
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p‐njunction formation by Te+ion implantation into solution‐grown Pb1−xSnxTe 来自 掌桥科研 喜欢 0 阅读量: 1 作者:Y Kato,Y Katayama,KLIKF Komatsubara 摘要: The ion implantation of Te+is used to convert layers ofn‐type Pb1−xSnxTe intoptype. A Te+ion ...
Solvation effect promoted formation of p-n junction between WO3 and FeOOH: A high performance photoanode for water oxidation The accumulation of H2O2 on the surface of WO3 in the process of photoelectrochemical (PEC) water splitting leads to the decrease of photoactivity of WO3. ... XFY Huang...
p n junction rectification p n 结型整流 p type conduction p 型导电性 p type diffusion p 型扩散 p type dopant p 型掺杂剂 p type doping p 型掺杂 p type semiconductor p 型半导体 p well diffusion p 阱形成扩散 p well mask p 阱形成掩膜 ...
Formation of P-N junction in ITO/P-Si structure by Nd: Yag laser radiation for solar cells application The research report is devoted to the development of a new method of nanostructures formation in ITO/p-Si/Al structure with powerful laser radiation and st... A Medvid',P Onufrijevs,E...
FORMATION OF P-N JUNCTION 专利名称：FORMATION OF P-N JUNCTION 发明人：TETSUDA HIROSHI 申请号：JP14608784 申请日：19840716 公开号：JPS6126212A 公开日：19860205 专利内容由知识产权出版社提供 摘要：PURPOSE:To obtain a P-N junction by making Si single crystal by a treatment at 500- 600 deg.C ...
In such a manner, the II-VI group compound semiconductor having a conductivity contrary to that of the substrate 2 is epitaxially grown on the substrate 2, whereby a p-n junction of the II-VI group compound semiconductor is formed. 展开 ...
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