consisting of ZnSe, can be suppressed. The Se atoms have a rate of evaporation which is lower than the diffusion rate of Au, as a result of which the formation of the pn-junction becomes possible.doi:DE3123232 A1Jun-Ichi Nishizawa
Three- dimensional (3D) structures composed of an arbitrary number of materials can be handled, and several physical effects can be modeled for multiple chemical species involved in the process [1]. In addition to being capable of handling arbitrary 3D structures, Sentaurus Topography 3D can also...
A moisture- electrical – temperature (MET) test is proposed to evaluate the outdoor reliability of high power blue LEDs, with and without phosphor, and to understand the degradation physics of LEDs under the environment of combined humidity, temperature
In-line LED lamp beads are a common electronic component, they have pins, and can be installed by inserting into the socket on the circuit board The packaging process of Through-Hole LED usually includes the following steps: Chip dicing: LED chips are cut from the wafer into individual LED ...
Fig. 1: Growth of Janus MoSSe. Full size image Fig. 2: Raman and PL spectra. aRaman andbPL spectra of the MoS2flake grown in the first step and the MoSe2in the peripheral region of the flake removed after the whole steps for the formation of the Janus MoSSe were finished. These spec...
Antibody-drug conjugates (ADCs) comprise an antibody, linker, and drug, which direct their highly potent small molecule drugs to target tumor cells via spe
(1) U.S. Pat. No. 4,245,386 discloses a series-connected photovoltaic element array comprised of a plurality of first electrode sections, photovoltaic layer sections formed of a thin film semiconductor (with pn junction), and second electrode sections, formed on an electrically insulating substr...
The present invention also discloses a method of manufacturing a BiCMOS process, the PN junction varactors. 本发明器件能大大减少器件的面积,减少器件的传导电阻,同时还能保持良好的器件性能,还能作为BiCMOS高频电路中的输出器件. Device of the invention can greatly reduce the area of the device to reduce...
A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing therein gold which is a p-type impurity or by forming therein a gold alloy in an inert gas ...
Thus it will be seen that an unacceptably large variation in results can occur. In fact, if the breakdown voltage of the buried pn junction becomes high enough, unstable surface-junction breakdowns will occur instead, i.e. if BVEBO <BVZ then the breakdown will occur at the surface. Thus ...