Comparison with breakdown data demonstrates that the new model not only reproduces all the important results of the standard percolation picture but provides successful explanation for other experimental observations such as the change of the breakdown distribution with 螖 I BD....
An overview of dielectric breakdown phenomena, their mutual interactions, their effect on gate oxide reliability and their consequences for oxide thickness scaling, introducing the percolation model. Article Google Scholar Suñé, J. et al. Nondestructive multiple breakdown events in very thin SiO2 ...
The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon...
A unified percolation model for gate oxide breakdown Based on the Percolation theory and defects creation mechanisms of both E model and 1/E model, a unified percolation model for gate oxide breakdown is brou... ZF Ma,YQ Zhuang,L Du,... - 《Journal of Xidian University》 被引量: 4发表...
1. 氧化物崩溃 Nanomos Technology - Excel ... oxide apertures 氧化物孔径oxide breakdown氧化物崩溃oxide charge trapping 氧化物电荷 … www.docstoc.com|基于 1 个网页 2. 氧化物分解 Icepak高级建模1_简介及目录... ... –电子移动 Electro-migration –氧化物分解Oxide breakdown–晶格振动( lattice vibrat...
2, (3) a steady-state thickness in certain environments, and (4) film breakdown at high potentials or exposure to chlorides or other halides. Among the models discussed in recent literature, one finds the point-defect model (MacDonald), and the mixed-conduction model (Bojinov). A review ...
The impact of correlated defect generation on dielectric breakdown is also addressed by means of a percolation model. It is shown that correlated generation provides no significant degradation of the breakdown lifetime with respect to Poisson statistics.Ielmini...
以半导体的稳定度测试为例,最常见的就是闸极氧化崩溃(Gate oxide breakdown) 事件。 只要发生全崩溃事件,则套用至失败 … www.ni.com|基于 1 个网页 3. 闸极氧化层崩溃 ...7, 435, 442-444, 467-468闸极氧化层崩溃(gate oxide breakdown) 闸极氧化层电容(gate oxide capacitance) 闸极绝缘 … ...
Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides. An existing cell-based percolation model with parameter correlation can find its potential applications in assessing soft-breakdown (BD) statistics as long... Chen,Ming-Jer,Kang,... - 《Applied Physics Letters...
Above VSET, as there is a compliance limit of 10 μA (to avoid dielectric breakdown), we do see a saturation for the current that we measured. In the reverse run from 2 V–−2 V, the device is in LRS until −1.9 V (VRESET). Above this again it reaches to HRS and...