SiliconAluminium IonsIon ImplantationOxidationMeetingsSi (100) wafers were implanted with Al at 500°C to high doses at multi-energies and were oxidized in 1 atm flowing oxygen at 1000°–1200°C. The morphology, structure, and oxidation behavior of the implanted and oxidized Si were studied ...
Thermal oxidation is a common technique to manipulate macropore shape and realize a variety of novel structures in silicon. The stress and deformation induced by such oxidation, kinetics of oxide growth, and its anisotropy are reviewed. Uniform arrays of both silicon and silica microstructures such ...
A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate materials which may be used as a template for strained Si is described. A silicon-on-insulator substrate with a very thin top Si layer is used as a template for compressively strained SiGe growth. Upon relax...
摘要: PROBLEM TO BE SOLVED: To provide a fine mixture of cerium oxide with at least one of a metal oxide and a metalloid oxide.收藏 引用 批量引用 报错 分享 文库来源 求助全文 Consist of with oxidation cerium and silicon dioxi 优质文献 相似...
For the light-duty market (i.e. passenger diesel vehicles), DPFs are usually made from silicon carbide or aluminum titanate. A catalyzed DPF may also contain a Pt-containing catalyst coating (i.e. a catalyzed soot filter (CSF) to assist with the combustion of soot and to oxidize CO ...
摘要: A single-crystal silicon surface was modified with a bisoxazoline–Pd molecular layer and utilized as a highly efficient (catalyst turnover number up to 780?000, 110 °C, 72 h) and recyclable catalyst in the aerobic oxidation of benzylic alcohols....
Physical activation has the advantages of a simple production process, less corrosion to equipment, and environmental friendliness. Chemical activation is to mix carbon materials with chemical activators (KOH, H3PO4, NaOH, phytic acid, etc.), and then carbonize at 400–900 °C, which has the...
The oxidation resistance of 9% chromium steels, either with 0.5% Si or doped up to 4% Si, was studied at 600 and 950 °C under either 1 atm oxygen or Ar–H 2 mixture to elucidate the influence of silicon and oxygen pressure. Particular attention was paid to the initial stages of oxid...
Anodic oxidation during MEMS processing of silicon and polysilicon: native oxides can be thicker than you think The thickness and surface roughness of the native oxide on undoped and P-doped single crystal silicon and polycrystalline silicon (polysilicon) were measur... H Kahn,C Deeb,Loannis Chas...
Accordingly, Figure 1.11 represents only tendencies of the oxidation resistance of various ceramics. The most insensitive materials are silicon compounds such as silicon borides, molybdenum disilicide (MoSi2), silicon carbide, and silicon nitride. These materials form a relatively dense silica layer on...