即“硅的选择氧化”(Local Oxidation of Silicon)- CMOS工艺最常用的隔离技术就是LOCOS(硅的选择氧化)工艺,它以氮化硅为 …baike.baidu.com|基于3个网页 3. 硅的定位氧化 机械专... ... local overheating 局部过热,局部过烧 local oxidation of silicon 硅的定位氧化 local panel 现场表盘,就地仪表盘 ......
1) Local oxidation of silicon 局部氧化 例句>> 2) localized oxide 局部氧化层 3) locos[英]['ləukəu] [美]['loko] 硅的局部氧化 4) localized oxidized pinholes 局部氧化针孔 5) partial aeration 局部充氧 1. Therefore,threepartial aerationmeasures including influent preaeration,aeration in th...
1) LOCOS (local oxidation of silicon) 硅的定位氧化 2) Oxidation of silicon 硅的氧化 3) in-situ silicone dioxide 原位二氧化硅 4) amorphous silicon dioxide 无定形二氧化硅 1. It is possible to raise the modulus of normal low modulus sodium silicate by adding some quantity ofamorphous silicon di...
E. RANK, Local oxidation of silicon - a finite element approach, in Mathematical Modelling and Sim- ulation of Electrical Circuits. Bank, Bulirsch, Merten, eds. Birkhauser Verlag 1990.Rank E (1989) Local oxidation of silicon—a finite element approach. In: Bank RE, Bulirsch R, Merten K (...
Study of the Local Oxidation of Silicon Waveguide for Realizing the Intra-Guided Mode Conversions The impressive achievements in research and developments of silicon-on-insulator (SOI) based silicon photonic integrated (PIC) devices have been made, but the coupling loss between the fibre and SOI ...
The formation of silicon dioxide isolated silicon islands on the surface of a substrate is improved by utilizing as an oxidation mask a patterned layer of silicon nitride which is deposited by LPCVD directly onto the surface of the silicon wafer. The subject method substantially reduces the incidenc...
1. A local oxidation of silicon process, a process of the type wherein a capped single crystal silicon mesa (1) is defined in a silicon substrate (3) and thereafter an isolation structure (13) of local field oxide is grown by thermal oxidation of the silicon; characterised in that:- a...
Local oxidation of silicon with sidewall masked is 专利名称：Local oxidation of silicon with sidewall masked isolation process 发明人：Chiu, Tzu-Yin,Liu, Te-Yin Mark,Erceg, Frank Michael,Moerschel, Kenneth Gordon,Prozonic, Michael Allen,Sung,Janmye 申请号：EP95303491.5 申请日：19950524 公开号...
A novel LOCal Oxidation of Silicon (LOCOS)-type isolation technology free of the field oxide thinning effect, named POlysilicon (poly-Si) Spacer LOCOS (POS-LOCOS), has been developed. After the first field oxidation, poly-Si is deposited and etched anisotropically. Then, at the narrow field ...
Evaluation of Double Spacer Local Oxidation of Silicon (LOCOS) Isolation Process for Sub-Quarter Micron Design Rule Double Spacer local oxidation of silicon (LOCOS) with shallow recess of silicon (DS-LOCOS) is described. The process has two spacers, a thin nitride spacer... JANG,Se-Aug,KIM,...