即“硅的选择氧化”(Local Oxidation of Silicon)- CMOS工艺最常用的隔离技术就是LOCOS(硅的选择氧化)工艺,它以氮化硅为 …baike.baidu.com|基于3个网页 3. 硅的定位氧化 机械专... ... local overheating 局部过热,局部过烧 local oxidation of silicon 硅的定位氧化 local panel 现场表盘,就地仪表盘 ......
a) LOCOS(local oxidation of silicon)隔离,特点:结构上采用局部场氧化的方法,提高寄生场效应晶体管的阈值电压,保持低的有源区电压,从而防止场区的寄生场效应管的开启;在氮化硅的边缘到其内部生成逐渐变薄的二氧化硅层,即鸟嘴结构,属于无用的过渡区,既不能作为隔离区,也不能作为器件区,对器件的集成和后序工艺的...
E. RANK, Local oxidation of silicon - a finite element approach, in Mathematical Modelling and Sim- ulation of Electrical Circuits. Bank, Bulirsch, Merten, eds. Birkhauser Verlag 1990.Rank E (1989) Local oxidation of silicon—a finite element approach. In: Bank RE, Bulirsch R, Merten K (...
2) silicon,local oxidation of(LOCOS) 区域性硅片氧化3) oxidized wafer 氧化硅片 1. The effect of rapid thermal annealing (RTA) on the measurement of ironin oxidized wafers with surface photo-voltage was investigated. 研究了快速热退火(RTA)对表面光电压SPV法测试氧化硅片中铁的影响。
The formation of silicon dioxide isolated silicon islands on the surface of a substrate is improved by utilizing as an oxidation mask a patterned layer of silicon nitride which is deposited by LPCVD directly onto the surface of the silicon wafer. The subject method substantially reduces the incidenc...
1. A local oxidation of silicon process, a process of the type wherein a capped single crystal silicon mesa (1) is defined in a silicon substrate (3) and thereafter an isolation structure (13) of local field oxide is grown by thermal oxidation of the silicon; characterised in that:- a...
局部氧化(local oxidation of silicon,LOCOS)隔离同时解决了器件隔离和寄生器件形成两个问题,工艺简单易行,且隔离密度显著高于 p-n 结隔离。缺点是表面有高台阶,使后续工艺的台阶覆盖差,影响光刻质量;形成鸟嘴(bird’s beak),( )A.减小器件表观宽度B.增加器件表观宽度C.减小
A novel LOCal Oxidation of Silicon (LOCOS)-type isolation technology free of the field oxide thinning effect, named POlysilicon (poly-Si) Spacer LOCOS (POS-LOCOS), has been developed. After the first field oxidation, poly-Si is deposited and etched anisotropically. Then, at the narrow field ...
Method for local oxidation of silicon (LOCOS) fiel 优质文献 相似文献 参考文献 引证文献Two-dimensional simulation of local oxidation of silicon: calibrated viscoelastic flow analysis Local Oxidation of Silicon (LOCOS) remains the common isolation technology for mass-production of integrated circuits. The...
Atomic force microscopy local oxidation of silicon nitride thin films for mask fabrication Silicon nitride thin films deposited on silicon substrates are patterned by using atomic force microscopy (AFM) local oxidation nanolithography. The mechan... I Fernandez-Cuesta,X Borrisé,F Pérez-Murano - 《...