1) non-radiative recombination centers 非辐射复合中心2) non-central-axis radiation 非中心辐射 1. According to intracavity double frequency crystal customarily working-state analysis,KTP crystal under non-central-axis radiation interior precise temperature field is first obtained by analytical analysis ...
The majority of the recombination in these p- n junction diodes is, however, non-radiative. This report describes the characterization of native defects in this material and provides evidence for non-localized, multiple and coupled-level defect centers. Thermal emission rates, photoionization cross ...
aThe Silver Cord 正在翻译,请等待...[translate] aThese surface states are non-radiative recombination centers and greatly hamper the development of many minority carrier 这些表面的州是非 radiative 重新组合中心和大大地妨碍很多的发展少数承运人[translate]...
(2000), Nonradiative Carrier Recombination Centers of Cl-Doped ZnSe Epitaxial Layers. phys. stat. sol. (a), 180: 201–205. doi: 10.1002/1521-396X(200007)180:1<201::AID-PSSA201>3.0.CO;2-Q Author Information 1 Department of Electrical and Electronic Engineering, Miyazaki University, 1-1...
吸附空气中大量的水蒸气,氧,碳等深能级杂质形成非辐射复合中心 The GaAs surface is shelled produces after the Ar plasma the more hand key, in the adsorption air the massive steam, the oxygen, x-ray region of energy states impurities and so on carbon forms the non-radiative recombination center ...
Through the time-resolved photoluminescence (TR-PL) measurement for excitons, we have studied the enhancement of spatial fluctuation (SF) and the generation of nonradiative-recombination-centers (NRC) due to high Si-doping into GaAs/AlAs short-period-superlattices (SPS's). We have carried out ...
Nonradiative recombination centers passivated by hydrogen are found to be reactivated in a wider temperature range in comparison with Si donors or DX centers. This process cannot be described by first-order kinetics.DOI: 10.1002/pssa.2211390227 被引量: 2 ...
(AGE) light of energy 4.66 eV. The decrease in PL intensity due to the addition of the BGE has been explained by a two levels recombination model based on SRH statistics. It indicates the presence of a pair of NRR centers in both samples, which are activated by the BGE. The degree of...
5) nonradiative recombination 非辐射复合 1. Even though threading dislocations in GaN epitaxial layers have been demonstrated to be effective nonradiative recombination centers,the CL band edge peak intensity does not decrease as the dislocation density increases. 结果表明,GaN外延层中的穿透位错是...
s paper5suggested that the In-composition fluctuations in InGaN layers enhance the radiative recombination efficiency, by suppressing the carrier diffusion into nonradiative recombination centers. However, with the development of nitride laser diodes, the beneficial role of the fluctuations of In-...