To understand the physical operation, one should study the silicon cross-section of the NMOS (simplified in Figure 2.a), and consider the equivalent bipolar schematic that one can uncover (Figure 2.b). Figure 2: NMOS cross-section (a) and the equivalent bipolar schematic (b). When increasi...
1)通过RIE、IBE等设备对不同制程(如:金、铜、铝铜合金、铝)、及(7nm -90nm及以上大工艺)各工艺节点的去层解剖及cross-section制备,然后合OM、SEM等设备拍照 。 2)通过SEM拍照软件进行连续拍照,使用拼图软件将照片拼成完整芯片概貌图,并导出建立工程文件。
抗辐射加固高压NMOS 器件的 单粒子烧毁效应研究 李燕妃，孙家林，王蕾，吴建伟,洪根深，贺琪 (中国电子科技集团公司第五十八研究所，江苏无锡214035)摘要：由于施加高栅极工作电压，使得器件容易发生重离子辐射损伤效应，其中，重大的重离子辐射损伤 效应是单粒子栅穿效应(SEGR)和单粒子烧毁效应(SEB )本文介绍了抗辐射...
nmos负载电阻 实验二 nmos 带负载电阻 【1】实验名称:带 电阻负载的共源级放大器版图设计 【2】目的：使用 Tanner 软件的L_edit 工具来绘制带电阻负载的共源级放大器的版图，并对其进行DRC 检测和T-Spice 模拟仿真。【3】使用设备和工具：微型计算机一台；Tanner 软件 【4】实验时间：2011-05-9 【5】版图...
This electrostatic discharge protection device can be used either as a self protecting pull-down portion of a mixed voltage I/O stage or, in a further aspect of the present invention, as a separate electrostatic discharge clamp.Krakauer, David Benjamin...
摘要:设计出一种能与体硅标准低压CM0S工艺完全兼容的新型凹源V-NM0S(igh voltage NM0S D结构在TSUPREM-4工艺模拟的基础上提出了该结构具体的工艺流程及最佳的工艺参数通过MEDICI进行特性模拟得到了该结构的电流-电压和击穿等特性曲线击穿电压比传统V-NM0S提高了37 5%G同时分析了凹源结构~p阱~缓冲层(Buffer层D...
An analysis of the bootstrap driver for the 28 V NMOS power switch is presented in Section 2, and Section 3 describes the integrated PA gate driver. Experimental results are shown in Section 4, and conclusions are drawn in Section 5.
FIG. 4 illustrated in plan view a CMOS IC in accordance with an embodiment of the invention, FIG. 13 illustrates, in cross section, a CMOS circuit in accordance with another embodiment; FIG. 14 shows simulated stress and mobility results from practice of embodiments of the invention; and ...
Triple-well NMOSFET: (a) top view and (b) cross-section view. Heavy ion striking was modeled with a cylinder of electron–hole pairs along the heavy ion trajectory. The linear energy transfer value remained constant. The length of ion trajectory was 10 μm and the radius of the ion ...
In this paper, a fast-transient-response NMOS low-dropout regulator (LDO) with a wide load-capacitance range was presented to provide a V/2 read bias for cross-point memory. To utilize the large dropout voltage in the V/2 bias scheme, a fast loop consisting of NMOS and flipped voltage ...