When the input is zero, then it goes to the pMOS transistor on top & down to the nMOS transistor at the bottom. Once the input value ‘0’ reaches the pMOS transistor, then it is inverted into ‘1’. thus, the connection toward the source is stopped. So this will generate a logic ...
7, a cross section view 80 of the cascode configured NMOST device 10 of the present invention is depicted. The shared diffusion area 18 constructs the source 20 of a first transistor 22 and the drain 24 of a second transistor 26. Once both transistors enter the snap-back region of ...
FIG. 1 is a three-dimensional view illustrating a gate-cut cross-section of a stacked device architecture according to one embodiment. The stacked device architecture 100 comprises vertically stacked non-planar transistor devices formed in a lower device layer 102a and in an upper device layer 102...
A high voltage DENMOS transistor (10) having improved ESD protection. The transistor (10) is optimized to provide maximum substrate current in order to turn on the inherent lateral npn transistor during an ESD event so that the lateral npn can dissipate the ESD event without damage to the tra...
In the SOI CMOS integrated circuit manufacturing process, the main use of the process is through the back channel for high doping to increase the threshold voltage of the back gate, thereby increasing the irradiation causes the NMOS transistor threshold voltage variation of the capacity. 通过背栅沟...
See the Internal Current Limit section. 6.3.4 Dropout Voltage The TPS732 uses an NMOS pass transistor to achieve extremely low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the NMOS pass transistor is in the linear region of operation and the input-to-output ...
GDNMOSDesignforESDprotectioninSubmicronCMOSVLSILiZhiguo,YueSugeandSunYongshuBeijingMicroelectronicsTechnologyInstituteBeijing,ChinaLizhg02@163..
A method for making an isolated NMOS transistor (10) in a BiCMOS process includes forming an N- conductivity type DUF layer (19) in a P conductivity type semiconductor substrate (12), followed by forming alternate contiguous N+ and P conductivity type buried regions (30,26) in the substrate...
FIGS. 1A-1Gare cross-sectional views of an embedded FLASH integrated circuit comprising a FLASH memory cell, a PMOS transistor and a NMOS transistor illustrating the steps on an embodiment of the instant invention. DETAILED DESCRIPTION OF THE INVENTION ...
To drive the power transistor for low-dropout voltage, charge pumps or extra batteries must be introduced. A charge pump circuit powering the error amplifier would introduce switching noise and consume extra current and area overhead. In the cross-point memory, a read voltage (Vread) can be ...