The optimal band gap for a semiconductor in photovoltaic (PV) and photocatalytic (PC) devices is ~1.5-2.0 eV. Additionally, for PC applications the band edges must be suitably placed to ensure that the desired electrochemical reactions are thermodynamically favorable.1 Nickel oxide (NiO) is an ...
Recently, metal oxide gas sensors have attracted much attention in connection with monitoring of combustible and toxic gases because of their higher sensitivity, fast response and recovery times, low power consumption, and low fabrication cost. Nickel oxide (NiO) is a wide band gap and p-type se...
Malandrino, Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology, Thin Solid Films 563 (2014) 50-55.R. Lo Nigro, S. Battiato, G. Greco, P. Fiorenza, F. Roccaforte, and G. Malandrino, "Metal organic chemical vapor deposition of nickel ...
In this context, an inverted structure adopting different hole transport materials such as poly (3,4-ethylenedioxythiophene) poly (styrene sulfonate) (PEDOT:PSS) and nickel oxide (NiO) might provide an improved alternative. The inverted structure is formed in the structure of p-i-n and the p-...
Thin films of nickel-doped zinc oxide (Zn1-NiO) show redshift in the optical band gap and in the near band edge (NBE) emission of the photoluminescence spectra. The Zn1-NiO thin films obtained by sol-gel spin coating method show narrowing of the band gap from 3.23 to 3.00 eV as the...
Sanjeeviraja, "Structural and optical studies on nickel oxide thin film prepared by nebulizer spray technique" Physica B: Condensed Matter, 452, 1-6, 2014Gowthami, V., Perumal, P., Sivakumar, R., Sanjeeviraja, C.: Structural and optical studies on nickel oxide thin film prepared by ...
Preparation of high aspect ratio nickel oxide nanowires and their gas sensing devices with fast response and high sensitivity. J Mater Chem. 2012;22:8327-35.Preparation of high aspect ratio nickel oxide nanowires and their gas sensing devices with fast response and high sensitivity. Jian Wang,...
Pawar et al., "Effect of annealing on structural, morphological, electrical and optical studies of nickel oxide thin films," Journal of Surface Engineered Materials and Advanced Technology, vol. 1, no. 2, pp. 35-41, 2011.P. Godse, R. Sakhare, S. Pawar, M. Chougule, S. Sen, P. ...
An ITO (Indium Tin Oxide coated glass) semiconductor substrate was used as the working electrode on which the NiOxIn layer was electrodeposited. An Ag/AgCl (saturated in 3.0 M NaCl) reference electrode and a Pt wire as the counter electrode were also used. First, the ITO substrate (2.0 cm...
In this letter, the conduction mechanism through epitaxial nickel oxide (NiO) dielectric films grown by metal-organic chemical vapor deposition on AlGaN/GaN heterostructures was investigated. In particular, macroscopic current-voltage measurements carried out at different temperatures allowed to demonstrate ...