acids into the crystal lattice of copper (I) oxide, akin to the way living organisms incorporate organic macromolecules into minerals during biomineralization, leads to significant shrinkage in the volume of the host unit cell and a strong blueshift in the band gap of up to approximate to 18%....
acids into the crystal lattice of copper (I) oxide, akin to the way living organisms incorporate organic macromolecules into minerals during biomineralization, leads to significant shrinkage in the volume of the host unit cell and a strong blueshift in the band gap of up to approximate to 18%....
Journal of Solid State ElectrochemistryTyona, M.D.; Osuji, R.U.; Asogwa, P.U.; Jambure, S.B.; Ezema, F.I. Structural modification and band gap tailoring of zinc oxide thin films using copper impurities. J. Solid State Electrochem. 2017, 21, 2629-2637. [CrossRef]...
Nitrogen-doped cuprous oxide (Cu_2O), one of the most promising materials for applications in photovoltaic cells, has recently attracted much attention and sparked a debate as to whether its band gap is widened by N doping. Using first-principles calculations, we verify that N atoms doped into...
Although we find a significant core hole shift in the measured O K XAS of ZnTiO3, we provide a simple empirical scheme for estimating the band gap that may prove to be applicable for any d10-d0 ternary oxide, and could be useful in finding a ternary oxide with a band gap tailored to...
Presence of Gap States at Cu/TiO2 Anatase Surfaces: Consequences for the Photocatalytic Activity Copper-modified titania is a system of interest for its potential for photocatalytic applications in the production of solar fuels. Still, the role of copp... N Seriani,C Pinilla,YC Hernandez - 《...
Structural modification and band gap tailoring of zinc oxide thin films using copper impurities The doping effects of Cu on structural, morphological and optical properties of ZnO thin films and their PEC properties have been investigated via chemical... MD Tyona,RU Osuji,PU Asogwa,... - 《Jou...
The band gap of the CZTSSe and CZTS absorber layer is determined to be 1.24 eV and 1.51 eV, respectively, from a plot of [E ln (1 2 EQE)]2 versus E. described in our previous work20, the short-circuit current density of the CZTSSe cell increased considerably. Fig. 2c shows the ...
Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si ...
are discussed.It is found that the band gap and resistivity of TiO_2 film can be simultaneously tailored by co-doping with Ge and Nb.With doping volume fractions of 6%Nb and 20%Ge,the resistivity of the film can be reduced from 10~4Ω/cm to 10~(-1)Ω/cm,and the band gap from ...