The Infineon Power MOSFET models are tested, verified and provided in PSpice simulation code. All power device models are centralized in dedicated library files, according to their voltage class and product technology. The simulation model is evaluated with SIMetrix™ PSpice simulator. ...
基于开关瞬态反馈的SiC MOSFET有源驱动电路 摘要受内部寄生参数与结电容的影响,碳化硅(SiC)功率器件在高速开关过程中存在极大的电流电压过冲与高频开关振荡,严重影响了SiC基变换器的运行可靠性。因此,该文首先对SiC MOSFET开关特性进行深入分析,揭示栅极电流与电流电压过冲的数学关系;然后提出一种变栅极电流的新型有源驱...
[21]Bolotnikov A,Losee P,Matocha K,et al.3.3kV SiC MOSFETs designed for low on-resistance and fast switching[C]//2012 24th International Symposium on Power Semiconductor Devices and ICs,Bruges,2012: 389-392. An Indirect Series-Connected SiC MOSFET Power Module with Voltage Self-Balance Liu ...
Thermal simulation using Infineon’s SPICE models of power MOSFETs - Module 2 OptiMOS™ 7 40 V MOSFET for tomorrow’s automotive applications TOLG: the innovative package TO-Leaded with gullwing Introducing Infineon’s automotive MOSFETs for electric two-wheeler applications Low-voltage battery...
POLAR3™ HIGH VOLTAGE MOSFET,光隔离光伏栅极驱动器,甚高电压功率MOSFET,3-PHASE HALF-BRIDGE GATE DRIVER IC,FAST TURN OFF THYRISTORS,声二极管,单相整流桥,导通二极管,HIGH TEMPERATURE SCRS,DIODE,ASYMMETRIC THYRISTORS,TRENCHT2™ HIPERFET™ POWER MOSFET,SWITCHING THYRISTORS,超结技术功率MOSFET,三相二极管桥...
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A low voltage planar MOSFET has a polyline width of less than 3.8 microns and a channel (base) region depth of less than 1.5 microns to produce a device having a reduced figure of merit (or product of Q.sub. GD and R.sub.DSON)....
核心提示:5月22-24日, “2025功率半导体器件与集成电路会议(CSPSD 2025)”将于南京举办。山东大学集成电路学院/晶体材料全国重点实验室教授、博士生导师刘超将受邀出席论坛,并带来《1.5 kV全垂直GaN-on-Si功率MOSFET》的主题报告,分享最新研究成果,敬请关注!
overcome the drawbacks of bipolar MOSFET drivers by fully switching the power MOSFET between the two power rails, VDD, and ground. The disadvantage of a MOS-only driver IC is its inability to source high gate current at low voltage, such as the power MOSFET gate-to-source threshold voltage....