High-side P-channel MOSFET Industry-standard pinout Compatible with existing surface mount techniques RoHS complaint Best price/performance Ease of use Benefits Applications 产品 关闭配置表 比较 分享 下载 46结果 筛选 编辑列表 产品 Product Status ...
N and N-channel dual MOSFETs N and P-channel dual MOSFETs P and P-channel dual MOSFETs Features High and low-side MOSFETs in a single package High-side P-channel MOSFET Industry-standard pinout Compatible with existing surface mount techniques RoHS complaint Best price/performance Ease of use...
MXB040N10 is an N-channel enhanced mode power Mosfet with VDS=100V, ID=128A, RDS (ON) (Typ.)=4.0m Ω @ VGS=10V. Provide TO-263-3L packaging. The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as ...
Ease of Use:Comes with a 2n7000 mosfet pinout, making integration seamless for users. High-Quality Material:Crafted with original IRF740PBF components, ensuring reliable performance and durability. Versatile Application:Ideal for a range of projects, from high voltage circuits to mosfet regulators. ...
Dual N-Channel Enhancement Mode Power MOSFET MX8205A-8PIN MX8205A DESCRIPTION The MX8205A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. MX8205A GENERAL FEATURES MX8205A APPLICATION VDS=20V, ID=6A ...
矽源特ChipSourceTek-MX6010是VDS=60V, ID=10A,RDS(ON)(Typ.)=15mΩ@VGS=10V,RDS(ON)(Typ.)=18mΩ@VGS=4.5V的N沟道增强模式电源Mosfet。 The 矽源特ChipSourceTek-MX6010 is the high cell density trench N-Channel MOSFETs, which provide excellent RDS(ON) and gate charge for most of the synch...
矽源特ChipSourceTek-MX6010 Description/描述:矽源特ChipSourceTek-MX6010是VDS=60V, ID=10A,RDS(ON)(Typ.)=15mΩ@VGS=10V,RDS(ON)(Typ.)=18mΩ@VGS=4.5V的N沟道增强模式电源Mosfet。The 矽源特ChipSourceTek-MX6010 is the high cell density trench N-Channel MOSFETs, which provide excellent RDS(ON...
CSD16321Q5 www.ti.com SLPS220B – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET™ Power MOSFET Check for Samples: CSD16321Q5 FEATURES 1 •2 Optimized for 5V Gate Drive • Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • ...
The IRLML0040TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. Industry-standard pinout MSL1, Consumer qualification Environment-friendly Increased reliability 技术规格 通道类型 N通道 电...
Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1.5 mm outline with excellent thermal characteristics and an ultra low profile...