1.建立自己的数据库 2.添加元器件 快捷键 i 3.编辑元器件参数 4.对元器件进行连线 快捷键w 点击端点连接 5.检查并保存 四、仿真 V~DS~ 与 I~D~特性曲线 1.进入仿真软件 Launch - -> ADE_L 2.设计变量 点击Variables --->Copy From Cellview 设置Vds = 1.2v, vgs = 1v 3.添加仿真分析 Analyse...
2) Drain-》Bulk雪崩击穿: 这就单纯是PN结雪崩击穿了(**alanche Breakdown),主要是漏极反偏电压下使得PN结耗尽区展宽,则反偏电场加在了PN结反偏上面,使得电子加速撞击晶格产生新的电子空穴对 (Electron-Hole pair),然后电子继续撞击,如此雪崩倍增下去导致击穿,所以这种击穿的电流几乎快速增大,I-V curve几乎垂直上去...
2) Drain-》Bulk雪崩击穿: 这就单纯是PN结雪崩击穿了(**alanche Breakdown),主要是漏极反偏电压下使得PN结耗尽区展宽,则反偏电场加在了PN结反偏上面,使得电子加速撞击晶格产生新的电子空穴对 (Electron-Hole pair),然后电子继续撞击,如此雪崩倍增下去导致击穿,所以这种击穿的电流几乎快速增大,I-V curve几乎垂直上去...
then the drain channel sweeps VDSthrough a range of values, measuring the resulting current at each point. Next, the gate channel applies a different voltage to the gate and the process repeats, constructing the next MOSFET I-V curve in the set. ...
A new circuit block having a stair-shaped I-V curve is described. The proposed circuit is based on novel configuration of three cascode branches. Furthermore, 4-level quantizing inverter and 4-level latch utilizing the proposed circuit are also presented. Unlike the previous work, these works ...
Fig. 6 IDR-VFcurve 3. 應用在Totem pole PFC Totem pole PFC是一種電源PFC電路拓撲,能夠同時實現高效率和少量元件,隨著SiC和GaN的廣泛使用,這種拓撲在近年來備受關注。圖7為Totep pole PFC電路與操作模式。Q1, Q2為快速臂,Q3, Q4為慢速臂。由於Q1和Q2操作在硬切,因此設置了死區時間,以防止Q1和Q2同時導通...
13、itance,I-V curve at Turn on and Turn off,Turn on,Turn off,Power dissipation area,1,2,Ring cause,(1)the total drain capacitance(CDG+CDS) and the drain inductance LD set up the “Ring” in the drain circuit (2)this “Ring” decays with a time constant that depends on the total...
Piecewise Linear (default) | Tabulated I-V curve Table type— Tabulated function Table in If(Tj,Vf) form (default) | Table in Vf(Tj,If) form Reverse I-V characteristics type— Type of reverse I-V characteristics Specify off conductance (default) | Tabulate Forward voltage— Forward voltage...
Their should be two curves on each graph, the original result and a curve showing a 20% change in I-V due to the parameter change. 3. Analyze the simullation results and describe what happens to I-V curves in each case and why. 4. A...
To model a tabulated diode, set the Model body diode parameter to Tabulated I-V curve. This figure shows the implementation of the tabulated diode option: When choosing this parameterization, you must provide the data for the forward bias only. The block implements the diode using a smooth int...