图8.2 TypicalSource-to-Drain Diode Forward Voltage 一般来说,VSD典型值在0.7V～0.9V之间。大于100V的高压器件的VSD最大值为1.6V,小于100V的低压器件的VSD最大值为1V。 4. 正向导通时间ton: 基于漏极和源极外部电路寄生电感的正向导通时间ton,基本可以忽略不计。 5. 反向恢复时间trr,反向恢复充电电量Qrr,最...
Infineon DirectFET 双极性 MOSFET 数据手册说明书 DirectFET ®plus Power MOSFET Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link ...
高功率 MOSFET 数据手册说明书 Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, I D = 250μA)On State Drain Current 2 (V DS > I D(on) x R DS(on) Max, V GS = 10V) Drain-Source On-State Resistance 2 (V GS = 10V, 11A) Zero Gate Vo...
Forward Transconductance VDS=5V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current V 1 µA 5 ±100 nA 2 2.5 V A 36 44 mΩ 61.5 75 42 53 mΩ 21 S 0.75 1 V 3.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse...
body diodestacking faultsIn order to achieve cost reduction or shrinkage of power devices, an internal body diode, which forms in a MOSFET parasitically, can be designed as a free-wheeling diode in substitution for an external Schottky barrier diode (SBD). However, in a SiC p-i-n diode, ...
Transfer Characteristics 10 VGS = 0 V 1 TJ = 150 oC 0.1 TJ = 25 oC 0.01 TJ = −55 oC 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 −VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 18. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 7 FDME1034CZT TYPICAL ...
Gate Resistance 1000 0.1 TJ = 150°C 0.01 0.001 0 TJ = 25°C 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current 1000 100 10 ms 10 TC = 25°C Single Pulse 1 VGS ≤ 10 V RDS(on) Limit Thermal Limit ...
Body DiodeCharacteristics ParameterSymbolMin.Typ.Max.UnitTestcondition Diode forwardvoltageVSD1.4VIS=80 A, VGS=0V Reverse recoverytimetrr186.6nsIS=40A, di/dt=100A/μs Reverse recoverychargeQrr1.6μC Peak reverse recoverycurrentIrrm15.4A Note
unisonic 6n60 n-channel power mosfet 数据表_datasheet
Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward voltage VSD 1.3 V IS=80 A, VGS=0 V Reverse recovery time trr 180 ns IS=30 A,di/dt=100 A/μs Reverse recovery charge Qrr 1.5 uC...