Figure 3: Diode dV/dt Let’s assume the MOSFET on the upper leg to be Q2 and the MOSFET on the lower leg to be Q1. When an inductor current is flowing through the MOSFET Q2, it turns OFF. When Q2 turns off, the inductor current flows back through the body diode of Q1 as a fre...
高功率 MOSFET 数据手册说明书 Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, I D = 250μA)On State Drain Current 2 (V DS > I D(on) x R DS(on) Max, V GS = 10V) Drain-Source On-State Resistance 2 (V GS = 10V, 11A) Zero Gate Vo...
铁源电子 IRF7413PbF 高电压高功率 N-Channel 电源 MOSFET 数据手册说明书 HEXFET ® Power MOSFET SO-8
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website.T C measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width ...
二、体二极管主要参数：1、正向压降；2、反向恢复特性（反向恢复电荷Qrr、反向恢复电流IRM，反向恢复时间...
diodeconductionlossandgatedriveloss.The 100100waveformsassociatedwiththeMOSFETsare RSET27.5kΩ(9) RSNSIPRE−CHG13.3mVshowninFig.5. 5-5 -VGS-Q1 VTH IOUT+I/2 L IQ1ReverseRecoveryCurrent VGS-Q2 IOUT-I/2 L IQ2 IOUT+I/2 L IOUT-I/2 L Q2BodyDiodeCurrent VIN VDS-Q2 t0t1t2t3t4t5t6...
(TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 ...
VGS = 10V State TA = +85°C ID 120 mA TA = +100°C 105 TA = +25°C 210 Steady Continuous Drain Current (Note 7) VGS = 10V State TA = +85°C ID 150 mA TA = +100°C 135 Pulsed 0.5 Maximum Body Diode Forward Current (Note 7) IS A Continuous 2 Pulsed Drain Current (10...
Looking at the MOSFET structure, one can see that the PN junction is not a simple or perfect diode. The MOSFET diode is the collector-base junction of a Bipolar Junction Transistor (BJT), also called the parasitic transistor, made by the N+ region of source, P/P+ region of the ...
body-diodesilicon carbidebasal plane dislocation (BPD)bipolar degradationstacking fault (SF)1,200-V and 1,700-V SiC power MOSFETs from multiple suppliers were subject to dc and pulsed-current stress of the body-diode. Three of the five suppliers of 1,200-V devices evaluated showed no ...