Interlayer excitons (ILEs) involving an electron and a hole situated in separate adjacent layers are pronounced intype-IITMD-based heterobilayers. Tebyetekerwa etal. report a high twist-angle-dependent energy shift of the ILE emission peak in MoS2/WS2heterobilayers for different samples investigated ...
Theoretical and first-principal studies involving twisted two-dimensional (2D) heterobilayer transition metal dichalcogenides (TMDs) predict interlayer exciton (ILE) emission energy amplitudes (the energy difference between the lowest and the highest ILE emission energies) in the range of 100-260 meV. ...
Sharma, SangeetaNature Publishing GroupScientific ReportsAzhikodan, D., Nautiyal, T., Shallcross, S. & Sharma, S. An anomalous interlayer exciton in MoS2. Sci. Rep. 6, 37075 (2016).Azhikodan, D.; Nautiyal, T.; Shallcross, S.; Sharma, S. An Anomalous Interlayer Exciton in MoS2. ...
Moreover, the electronic structure changing process with interlayer spacing of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 is different from each other. With the help of variable-temperature spectral experiment, different electronic transition properties of MoS2-WS2, MoS2-WSe2, and WS2-WSe2 have been ...
In addition, for MoS2/WS2 with θ ≈ 1.8° and MoSe2/WSe2 with θ ≈ 2.4° the energy profile for interlayer interband exciton resembles an antidot superlattice more than an array of QDs. This contrasts with the persistence up to θ ~ 3.5° of shallow QD arrays for both...
Atypical Exciton-Phonon Interactions in WS2 and WSe2 Monolayers Revealed by Resonance Raman Spectroscopy Resonant Raman spectroscopy is a powerful tool for providing information about excitons and exciton–phonon coupling in two-dimensional materials. We prese... ED Corro,ARB Mendez,Y Gillet,... - ...
Vertical and in-plane heterostructures from WS2/MoS2 monolayers A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges...
Interlayer‐State‐Coupling Dependent Ultrafast Charge Transfer in MoS2/WS2 Bilayers Light‐induced interlayer ultrafast charge transfer in 2D heterostructures provides a new platform for optoelectronic and photovoltaic applications. The ch... J Zhang,H Hong,C Lian,... - 《Advanced Science》 被引量:...
Yifei Y, Shi H, Liqin S, Huang L, Liu Y, Jin Z, Purezky AA, Geohegan DB, Kim KW, Zhang Y, Cao L (2015) Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 heterostructures. Nano Lett 15:486–491 23. Hsiao Y-J, Fang T-H...
Equally efficient interlayer heterostructures. Nano Lett. 15, 486–491 exciton (2015). relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 22. 23. Kong, D. Jung, Y., Seht eanl.,SJy.,nStuhnes,iYs .o&f MCohSa2, and J. J. CMhoeSme2icfiallmlysswynitthhveesirzteic...