The capacitance per unit area of the fabricated MIM capacitor was 0.229 渭F/cm2. And it had lower voltage coefficient of capacitance (VCC) and lower leakage current than that of Al2O3MIM capacitor prepared by Al oxidation and Si3N4MIM capacitor prepared by PECVD respectively. The fabricated ...
capacitance density must exceed 5 fF/μm2, the leakage current must be less than 10−8 A/cm2 and the non-linearity coefficient α (coefficient of the quadratic term in the empirical relationship between the capacitance C and applied voltage V for a MIM capacitor) must be less than 100 ...
Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric
structure, wherein the first metal structure, the second metal structure, the first dielectric material, and the second dielectric material are configured to form a single capacitor, and wherein the first and the second dielectric material layer comprise materials with opposite coefficient of ...
关键词: Ti-substituted $\hbox{Bi}_{1.5}\hbox{Zn}_{1.0}\hbox{Nb}_{1.5}\hbox{O}_{7 Capacitance density metal–insulator–metal (MIM) capacitor temperature coefficient of capacitance (TCC DOI: 10.1109/LED.2010.2043212 被引量: 2 年份: 2010 ...
TCC (temperature coefficient of capacitanceBias polarityCharge trapping and de-trappingIn this paper, reliability as well as electrical properties of high capacitance density metal–insulator–metal (MIM) capacitor with hafnium-based dielectric is analyzed in depth. The fabricated MIM capacitor exhibits ...
COEFFICIENTCAPACITORPt/La_20_3/Pt MIM (Metal-Insulator-Metal) capacitor was fabricated and its electrical characteristics were evaluated. Relation with voltage coefficients of the C-V curve (α and β) and 1 / C and J was investigated. It was found that a has a strong correlation with 1/...
metal-insulator-metal (MIM) capacitortemperature coefficient of capacitance (TCC)voltage coefficient of capacitance (VCC)Mn-doped Bi4Ti2O12 (M-B4T3) films were well formed on a TiN/SiO2/Si substrate at 200 °C without buckling using RF magnetron sputtering. The leakage current density these ...
A kind of purpose: method, it is arranged to eliminate metallic hard polymer form and one promotion phenomenon of minimum on the side wall of a upper electrode for manufacturing a capacitor of semiconductor device with a MIM (metal insulator metal), as caused by a thermal expansion coefficient...
K.-H. Cho, M.-G. Kang, C.-Y. Kang, S.-J. Yoon, Y.P. Lee, Titanium-substituted Bi1.5Zn1.0Nb1.5O7 for high-density and low-temperature-coefficient-of- capacitance MIM capacitor by low-temperature process (300 ◦C), IEEE Electronics Device Letter 31 (2010) 473-475....