Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structu...
CAPACITORPt/La_20_3/Pt MIM (Metal-Insulator-Metal) capacitor was fabricated and its electrical characteristics were evaluated. Relation with voltage coefficients of the C-V curve (α and β) and 1 / C and J was investigated. It was found that a has a strong correlation with 1/C, while...
Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structu...
The electrical I–V and C–V characteristics of the annealed dielectric film were investigated employing Al-HfO-Si MOS capacitor structure. The flat-band voltage () and oxide-charge density () were extracted from the high-frequency C–V curve. Dielectric study were further carried out on HfO ...