A method of forming ohmic source/drain contacts in a metal oxide semiconductor thin film transistor includes providing a gate, a gate dielectric, a high carrier concentration metal oxide semiconductor active layer with a band gap and spaced apart source/drain metal contacts in a thin film ...
Metal oxide semiconductor thin-film transistors (TFTs) have been recognized as the most promising technology in the field of flexible electronics and flat-panel displays because of their high...doi:10.1007/978-3-319-50824-5_3Deng, Wanling...
Here, we report the monolithic three-dimensional integration of indium oxide (In2O3) TFTs on a silicon/silicon dioxide (Si/SiO2) substrate at room temperature. We use an approach that is compatible with complementary metal–oxide–semiconductor (CMOS) processes to stack ten n-channel In2O3 ...
Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated...
6.4.Flexible OLED made using metal oxide TFTs 6.5.Tri-folded OLED displays reported by Semiconductor Energy Laboratory and Nokia Research Centre at SID 2014 6.6.Production process folded used to make a tri-folded OLED display. This was reported by Semiconductor Energy Laboratory and Nokia Research ...
METAL OXIDE TFT WITH IMPROVED STABILITY A metal oxide semiconductor device including an active layer of metal oxide, a layer of gate dielectric, and a layer of low trap density material. The layer of low trap density material is sandwiched between the active layer of metal oxi... CL Shieh,...
A method of fabricating MOTFTs on transparent substrates by positioning opaque gate metal on the substrate front surface and depositing gate dielectric material overlying the gate metal and a surrounding area and metal oxide semiconductor material on the dielectric material. Depositing selectively removabl...
A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temper...
Metal oxide TFT fabrication based on a solution-processing method is considered a promising alternative to conventional vacuum processing and has a number of advantages such as low cost, large-area fabrication, and process simplicity. A simple and reliab
(SWCNT)thinfilm transistor(TFT)complementarymetal−oxide−semiconductor (CMOS)integratedcircuitsbasedonathree-dimensional(3D) structure.TwolayersofSWCNT-TFTdeviceswerestacked,where onelayerservedasn-typedevicesandtheotheroneservedasp-type devices.Onthebasisofthismethod,itisabletosaveatleasthalfof thearea...