The meaning of METAL-OXIDE SEMICONDUCTOR is a semiconductor device (such as a diode or a capacitor) in which a metallic oxide (such as silicon dioxide) serves as an insulating layer.
The invention discloses a microheating plate for a metal oxide semiconductor nano-film gas sensor, which comprises a silicon substrate, a silicon island, a silicon nitride cut-off layer, a silicon dioxide insulation layer, an interdigital signal electrode, a temperature measuring electrode and a ...
MOSFET全称Metal-Oxide-SemiconductorField-Effect Transistor,中文名为金属-氧化物半导体场效应晶体管,简称金氧半场效晶体管或MOS管,是一种可以广泛使用在模拟电路与数字电路的场效晶体管。而功率MOSFET则指处于功率输出级的MOSFET器件,通常工作电流大于1A。 由于功率器件的分类方式非常多样,且各分类方式的分类逻辑并不存...
1.1Photo catalysis with metal oxide semiconductor Metal oxide semiconductorsconstitutes a class of inorganic materials that have irregular and the numerous properties and applications as sensors (Zhang et al., 2017; Tong et al., 2017; Cui et al., 2018), catalysts (Calzada et al., 2017; Phoon...
A method to formSiO2/SiCmetal–oxide–semiconductor structures by oxidation of a thin polycrystalline silicon (polysilicon) layer deposited on SiC is demonstrated. The oxidation time used is sufficient to oxidize all the polysilicon while short enough at 1050°C to insure insignificant oxidation of th...
Tin dioxide (SnO2), on the other hand, is a widely used metal oxide semiconductor, featuring a very high melting point and a negligibly small oxidation rate at elevated temperatures, as it is already in a fully oxidised state. Its specific resistance is intrinsically very high but can be ...
The metal oxide semiconductor field effect transistor (MOSFET) is the most basic element of integrated circuits (IC) which is used in many electrical devices in our daily life. The transistor has four-terminal contacts: gate (G), source (S), drain (D), and substrate body (B). In a tra...
Tin oxide doped with magnesium oxide or niobium pentoxide and prepared as a sintered material is found to be highly sensitive to oxygen partial pressure both in the presence of free oxygen and in the presence of oxidizable gases, such as carbon monoxide or the lower oxides of nitrogen, and ...
Metal oxide semiconductor devices having doped sil 优质文献 相似文献 参考文献 引证文献Electrical characteristics of Ge MOS device on Si substrate with thermal SiON as gate dielectric Metal–oxide-semiconductor (MOS) devices, using a Si substrate and a thermal SiON film as the gate dielectric on a...
complementary metal-oxide semiconductor 英 [ˌkɒmplɪˈmentri ˈmetl ˈɒksaɪd ˌsemikənˈdʌktə(r)] 美 [ˌkɑːmplɪˈmentri ˈmetl ˈɑːksaɪd ˈsemik&...