The demand for highly customized high performance memory chips to cater to the needs of HPC, AI, and automotive applications is driving the need for new design paradigms such as DTCO, Design Shift Left, Digitization, and Design-for-Reliability. ...
A semiconductor memory device includes a controller, a plurality of substrates, and a plurality of stacked memories that are spaced apart and sequence on each of the substrates. Each of the stacked memories includes an interface chip that is connected to the respective substrate and a plurality ...
SEMICONDUCTOR DEVICE This semiconductor device has: a plurality of memory chips provided with a first transmission/reception coil for communication by inductive coupling; and an interposer which is disposed at one end in a stacking direction along which the ... T Ueda,N Ogawa,R Takishita 被引量...
Microchip Technology, via its Silicon Storage Technology (SST) subsidiary, today announced that its SuperFlash® memBrain™ neuromorphic memory solution has solved this problem for the WITINMEM neural processing SoC, the first in volume production t
FILE PHOTO: Memory chips by South Korean semiconductor supplier SK Hynix are seen on a circuit board of a computer in this illustration picture taken February 25, 2022. REUTERS/Florence Lo/Illustration/File Photo SEOUL (Reuters) - South Korea's SK Hynix could see it...
Rambus Inc. (NASDAQ: RMBS), a provider of industry-leading chips and silicon IP making data faster and safer, today announced the CXL Memory Interconnect Initiative to define and develop semiconductor solutions for advanced data center architectures that
A high-speed interface circuit is implemented in a semiconductor memory chip including a memory core, a first interface circuit section, and a second interface circuit section. The first interface circuit section is connectable to a write data-/command and address signal bus, includes a write data...
Accordingly, the yield of the semiconductor memory system can be increased, and the reliability is also increased.doi:US5469390 AToshio SasakiToshihiro TanakaUSUS5469390 Sep 6, 1994 Nov 21, 1995 Hitachi, Ltd. Semiconductor memory system with the function of the replacement to the other chips...
The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposit
Fabrication of resistive memory chips The resistive memory chip consists of a 512 × 512 crossbar array. Each of the resistive memory cells is integrated on the 40 nm standard logic platform. The resistive memory cells, including bottom electrodes, top electrodes and a transition-metal oxid...