Bulk indium phosphide crystals have been prepared by zone melting with dislocation densities 104 ≤ N d ≤ 105 cm -2 . The residual impurity level in nominally undoped crystals and the dopant distribution in Cd-, Sn- and Ge-doped zone melted ingots, as revealed by spark source mass ...
The pressure of the barium I‐II transition has been determined in a modified single‐stage piston‐cylinder apparatus to be 55.0±0.5 kbar at 22°C. Three... Haygarth,C J. - 《Journal of Applied Physics》 被引量: 55发表: 1967年 The Melting Point of Germanium as a Function of Pressure...
There are a few reports on MD simulations of the melting point of bulk GaN. Nord et al. simulated the melting temperature to be 3500 ± 500 K37. Using a single-phase or a two-phase MD simulation, the melting temperature of bulk GaN is determined to be 4200 and 3000 K,...
Solis, Dynamics of femtosecond laser-induced melting and amorphization of indium phosphide, J. Appl. Phys. 96 (2004) 2352.J. Bonse, S. Wiggins, and J. Solis, "Dynamics of femtosecond laser-induced melting and amorphization of indium phosphide," J. applied physics 96, 2352-2358 (2004)....