Summary This document is part of Subvolume A1b 'Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties' of Volume 41 'SCollaboration: Authors and Editors of the LB Volumes III/17A-22A-41A1b...
INDIUM PHOSPHIDE (CAS 22398-80-7) information, including chemical properties, structure, melting point, boiling point, density, formula, molecular weight, uses, prices, suppliers, SDS and more, available at Chemicalbook.
Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online.Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of ...
Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers A semiconductor laser having a high modulation bandwidth is made by utilizing an InGaAsP cap layer and an InGaAsP active layer of different crystal structure. Channels are anisotropically ...
The indium phosphide is a semiconductor that has a face-centred cubic crystal structure. It has a direct band gap and is used in high-frequency electronics. It is a member of theIII-Vfamily of semiconductors. Its electron velocity is much higher than that of indium nitride, which is a gro...
Indium phosphide, with the chemical formula InP, has the CAS number 22398-80-7. It appears as a gray solid with no distinct odor. The basic structure of indium phosphide consists of indium atoms bonded to phosphorus atoms. It is insoluble in water, but soluble in acids. Indium phosphide is...
Indium phosphide (InP), indium arsenide (InAs), and indium tin oxide (ITO) are used in the manufacture of III–V semiconductors for solar cells, high-speed electronics, telecommunications, optoelectronics, touchscreens, and flat-panel devices. InP, ITO, indium oxide (IO), and InAs are used ...
Indium phosphide (InP) nanotubes have been synthesized via the vapor-liquid-solid (VLS) growth mechanism. The nanotubes are crystalline and have the (bulk)... EPAM Bakkers,MA Verheijen - 《Journal of the American Chemical Society》 被引量: 280发表: 2003年 Traps in semi-insulating InP studied...
Metal organic vapour phase epitaxy of indium phosphide - ScienceDirect MOCVD layers of InP have been grown over the temperature range 612–725°C in a horizontal atmospheric pressure reactor using trimethylindium (TMI) as the ... SJ Bass,C Pickering,ML Young - 《Journal of Crystal Growth》 ...
It has been shown that indium(III) phosphides serve as useful single-source precursors to such material. The decomposition of (t-Bu2P)3In (which has been obtained by reacting InCl3 with three equivalents of t-Bu2PLi)147 in refluxing 4-ethylpyridine leads to nanometer-size InP.148 This ...