在测试功能方面,可自由组合多种从190nm深紫外光谱至2400nm近红外光谱的探测器,并可拓展FTIR红外光谱测试模组、涡电流法非接触式或4PP接触式方块电阻测试模组、Mueller Matrix各项异性材料测试模组、Raman结晶率测试模组、电子迁移率表征模组、LBIC光诱导电流测试模组、反射干涉测试模组等多种功能,使SE2000成为光学和电学...
The formation of SiO 2 in film matrix and incorporation of low polar bonds like F and C were confirmed from obtained FTIR spectra. The porous nature of deposited film was confirmed from FE-SEM micrograph and the measured average pore diameter of mesopores was found to be 16.54nm. The ...
By means of OES, evidence is found for removal of hydrogen out of the low-k during plasma exposure, which is confirmed by FTIR measurements. Spectroscopic ellipsometry (SE) measurements in the 150-750 nm range show that the damage depth increases with TCP power. FTIR and SE are in accord....
The formation of SiO 2 in film matrix and incorporation of low polar bonds like F and C were confirmed from obtained FTIR spectra. The porous nature of deposited film was confirmed from FE-SEM micrograph and the measured average pore diameter of mesopores was found to be 16.54nm. The ...
The curve F shows the FTIR spectrum obtained after condensation then etched with a pure SF6 plasma; it shows still negligible moisture absorption but the additional CF x peaks remains present indicating the presence of HBPO residues after etch. The curve G is a reference process etched at −...
FTIR spectra Fourier transform infrared spectra ToF-SIMS time of flight secondary ion mass spectroscopy SEM scanning electron microscopy SS-NMR solid-state NMR polymer residues RIE silicon technology Si/ A8160C Surface treatment and degradation in semiconductor technology A8280B Chromatography A7660 ...
FTIR study of low-temperature CO adsorption on Cu/silicalite-1 A novel method was developed for the preparation of titanium silicalite-1 (TS-1) zeolite membrane with low cost through tetrapropylammonium bromide (TPABr)/weak organic base synthesis system, in which TS-1 crystals grew on an unseed...
plasmaat5Papressureand80WpowerwithsubsequentXPS.FTIRandopticalemissionspec— troscopyanalysis.XPSdataindicatethatheliumionshavebrokenSi—Cbonds.1eadingtoSi—C scissionwithC(1s)lostseriously.TheSi(2p),O(1s),peakobviouslyshiftedtohigherbindingen—
Advantageously, the UV curing process has been found to improve breakdown voltage behavior and wet etch resistance while minimally affecting the bulk dielectric constant of the sealed porous dielectric material. Moreover, FTIR analysis has shown that minor effects on film silanol content were observed ...
Advantageously, the UV curing process has been found to improve breakdown voltage behavior and wet etch resistance while minimally affecting the bulk dielectric constant of the sealed porous dielectric material. Moreover, FTIR analysis has shown that minor effects on film silanol content were observed ...