The critical size of silicon oxide precipitates and the formation of lattice defects by the precipitates are discussed. An expression is derived allowing estimation of self-interstitial emission by spherical precipitates as well as strain build-up during precipitate growth. The predictions are compared ...
Lattice Constants and Crystal Structures of some Semiconductors and Other Materials 注:在我国silicon以前是译作"矽"的,即“矽”字是硅字的旧称,鉴于跟矽字同音的字太多,1953年2月中国科学院召开了一次全国性的化学物质命名扩大座谈会,讨论通过并公布,把读音跟锡混淆不分的矽改成“硅”字。这样,矽铁就是硅铁...
A BCC unit cell contains two atoms: one-eighth of an atom at each of the eight corners ( 8×18=18×18=1 atom from the corners) plus one atom from the center. Any atom in this structure touches four atoms in the layer above it and four atoms in the layer below it. Thus, an ...
The optical spectra and local lattice structure for Yb3+ in K5Bi(MoO4)4 :Yb3+crystal were calculated on the basis of the complete diagonalization method and the superposition model.In the calculation the contributions of the variation of the cation-ligand bond lengths and bond angles were taken...
czuk,Douglas Andrew Buchanan,Supratik Guha,Vijay Narayanan,Lars-Ake Ragnarsson 申请号:US1099884 0 申请日:2004 1130 公开号:US20050095815A1 公开日:20050505 专利附图: 摘要:A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. ...
Method of forming lattice-matched structure on silicon and structure formed thereby A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an ... AB Nestor,MW Copel,S Guha,... 被引量: 0发表: 2003...
x-cladded Si dots on silicon dioxide as the gate insulator, and another with the same quantum dots on lattice-matched high- ZnS-ZnMgS-ZnS as the gate insulator. Simulations show that the oxide thickness should be within 80 to generate a third state in the transfer characteristic of the quan...
Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shel
Lattice energy refers to the sum of interactions between ions in a crystal structure, which is minimized by adjusting lattice parameters and atomic coordinates to achieve the lowest energy state. AI generated definition based on: Stratigraphy & Timescales, 2019 ...
the soft anharmonic nature of the HaP structure may be beneficial in self-healing mechanisms of the material9,10,11, allowing for low-energy synthesis routes in their fabrication. On the other hand, pairing of anharmonic fluctuations and optoelectronic processes for key quantities of HaPs,e.g....