shall be latch-up tested. The Input, output, and configurable I/O pins are to be tested with the I-test and the Vsupply pins tested with the Overvoltage test. This includes special pins defined in Annex A. The passing current or voltage values for the special pins can be used ...
闩锁效应latch up 闩锁效应latch up 是CMOS必须注意的现象,latch我认为解释为回路更合适,大家 以后看到latch up就联想到在NMOS与PMOS里面的回路,其实你就懂了一半了所以latch up是QUAL测试的一种
Chen J,Du Z W.Understanding and modeling of internal transient latch-up susceptibility in CMOS inverters due to microwave pulses.http://dx.doi.org/10.1016/j.microrel. 2013Jie Chen,Zhengwei Du.Understanding and modeling of internal transient latch-up susceptibility in CMOS inverters due to ...
similar principles apply to many other CMOS devices.Latchupmay be defined as the creation of a low-impedance path between power supply rails as a result of triggering
1、Latch up 闩锁效应是指CMOS电路中固有的寄生可控硅结构(双极晶体管)被触发导通,在电源和地之间存在一个低阻抗大电流通路,导致 2020-12-23 16:06:44 寄生电路的效应:Latch-Up(锁定) Latch-Up(锁定)是CMOS存在一种寄生电路的效应,它会导致VDD和VSS短路,使得晶片损毁,或者至少系统因电源关闭而停摆。这种效应...
condition that requires replacement of damaged parts. Regardless of the severity of the condition, latch-up is an undesirable but controllable phenomenon. In many cases, latch-up is avoidable. The cause of the latch-up exists in all junction-isolated or bulk CMOS processes: parasitic PNPN paths...
For example, a condition known as latch-up has long been a source of frustration for circuit verification engineers. Although the detection of latch-up vulnerability has been heavily researched, it is created by a complex combination of factors, making it difficult to identify early in the ...
The P channel portion of the sense amplifier is disabled during power-up to avoid too rapid of a rise in voltage on the bit lines. Equalization of the bit lines is suppressed during the first cycle to avoid having the sense amplifier face the high current drain condition of little or no ...
Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16–300 KMechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16–300 KCryogenic latchuplow...
This interaction produces either a temporary malfunction of the CMOS device or, in some cases, permanent circuit damage. A condition which must be satisfied for latchup to occur is that the product of the common emitter DC current gains of transistors T1 and T2 is greater than or equal to...