Methods are described to prevent the inherent latchup problem of CMOS transistors in the sub-quarter micron range. Latchup is avoided by eliminating the low resistance between the V dd and V ss power rails caused by the latchup of parasitic and complementary bipolar transistor structure that are...
Latch-up is a common problem in CMOS integrated circuits. The modeling of latch-up with circuit simulation programs is addressed in this paper. The general features of a lumped element latch-up model are discussed along with a step-by-step approach to the component determination of the model....
Internal gettering can be used to reduce crosstalk in imagers and latchup susceptibility in CMOS circuits. The internal gettering process forms defects in the bulk of the silicon wafers that are effective recombination sites for minority carriers in the substrate. Experimental and theoretical results ar...
CMOS inverter circuits in silicon employing p-well technology have a low current consumption in both the on and off states. However, the inherent and undesirable parasitic bipolar transistors give rise to latch-up which results in a large current flow through the chip. Based on the equivalent ...
In line with the I/O circuits, the core latchup problem in HV process technologies is solved by isolation of the core circuit from the substrate in a separate N-pocket with a proper N-channel stop (NCS) ring at the periphery of the pocket. Thus, the main LV latchup practice is hardly...
With the device scaling down, higher integration and higher working frequency, the power consumption problem plays a significant role, which makes CMOS logic circuits more vulnerable due to the latch-up effects under high power microwave threats....
The occurrence of transient-induced latchup (TLU) in CMOS integrated circuits (ICs) under electrical fast-transient (EFT) tests is studied. The test chip with the parasitic silicon-controlled-rectifier (SCR) structure fabricated by a 0.18-mum CMOS process was used in EFT tests. For physical me...
LATCH-UP RESISTANT STRUCTURE AND ITS FORMATION PROBLEM TO BE SOLVED: To improve the latch-up resistance of a CMOS device by forming implants on the edges of an N well and/or a P well by using a hybrid r... DB Fei,フェイディベーカー,JS Brown,... 被引量: 0发表: 1998年 An Iso...
2005_A review of CMOS latchup and electrostatic discharge(ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies Part2 Latchup.pdf 2015-01-02上传 暂无简介 文档格式: .pdf 文档大小: 307.31K 文档页数: 19页 顶/踩数:
The silicon power MOSFET was developed to address this base drive problem. In a power MOSFET, the gate electrode provides turn-on and turn-off control upon the application of an appropriate gate bias. For example, turn-on in an n-type enhancement MOSFET occurs when a conductive n-type inver...