Heterogeneous integration by bonding Ⅲ-Ⅴ wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recently, Fabry-Perot Quantum Cascade Lasers integrated on silicon provided a 4800 nm light source for MIR silicon photonic ...
Integration of Single-Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer TransferThis work has been supported by the Army Research Office (ARO-MURI) under grant no. DAAD 19-01-1-0517 and by Arrowhead Research Cor doi:10.1002/adma...
Just like other pure functional code, functional reactive code is easier to get right on the first try, maintain, and reuse. reflex-frp 1082 12 hascard flashcard TUI with markdown cards Yvee1 315 13 haskell-ide-engine The engine for haskell ide-integration. Not an IDE haskell 2377 14 ...
the MLL was tested p-side up on the TEC, the length of the gain section (Lg) and the saturable absorber (SA) section (La) are 1576 µm and 404 µm, respectively. The gain section is forward driven by current (Ig)
A laser with a novel micro-loop mirror design fabricated on a silicon chip uses III-V semiconductor materials – a step forward for high-speed op
Quartz substrates may advantageously be used for the manufacture of devices for use in optical transmission systems, whereas devices grown on silicon substrates are suitable for integration with electronic microcircuits. An alternative manufacturing process provides for the chemical vapour deposition of sub-...
Passive broadband Faraday isolator for hybrid integration to photonic circuits without lens and external magnet Using a new femtosecond laser writing technique, researchers inscribed waveguides within latched bismuth-doped iron garnet, enabling a Faraday rotator waveguide exhibiting <0.15 dB insertion ...
Advanced interconnect technologies such as Through Silicon Vias (TSVs) have become an integral part of 3-D integration. Methods and systems and provided fo... M Mehendale,M Kotelyanskii,Todd W. Murray,... 被引量: 0发表: 2016年 Band gaps and Brekhovskikh attenuation of laser-generated su...
In summary, by hybrid integration of a LN external cavity with a III-V RSOA, we demonstrated the first integrated Pockels laser. The device exhibits a great reconfigurability based on the EO effect, featuring a record-high laser-frequency modulation speed of 2.0 EHz/s and switching speed ...
摘要: A micrometre-sized laser has been demonstrated in silicon, the most ubiquitous material of the electronics industry. The device operates at microwatt power levels and could open routes to compact photonic integrated circuits. See Letter p.470关键词:...